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Datasheets for R E

Datasheets found :: 8675
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No. Part Name Description Manufacturer
181 2N3906 Planar epitaxial PNP silicon transistor. -40V, 200mA. General Electric Solid State
182 2N3906 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics
183 2N3924 Silicon Planar Epitaxial Overlay Transistor Philips
184 2N3924 Silicon NPN planar epitaxial transistor for transmitter applications up to 175 MHz at 13.5 V supply voltage VALVO
185 2N3926 Silicon Planar Epitaxial Overlay Transistor Philips
186 2N3926 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage VALVO
187 2N3927 Silicon Planar Epitaxial Overlay Transistor Philips
188 2N3927 Silicon NPN planar epitaxial transistor for 175 MHz transmitters at 13.5 V supply voltage VALVO
189 2N4013 High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor ITT Semiconductors
190 2N4014 High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor ITT Semiconductors
191 2N4123 Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. General Electric Solid State
192 2N4123 NPN SILICON PLANAR EPITAXIAL TRANSISTOR Micro Electronics
193 2N4124 Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. General Electric Solid State
194 2N4124 NPN SILICON PLANAR EPITAXIAL TRANSISTOR Micro Electronics
195 2N4125 Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. General Electric Solid State
196 2N4126 Planar epitaxial passivated PNP silicon transistor. -25V, 200mA. General Electric Solid State
197 2N4199 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
198 2N4200 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
199 2N4201 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
200 2N4202 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
201 2N4203 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
202 2N4204 Fast switching, high-voltage thyristors especially designed for pulse modulator applications in radar and other similar equipment Motorola
203 2N4400 Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. General Electric Solid State
204 2N4400 NPN SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics
205 2N4401 Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. General Electric Solid State
206 2N4401 NPN SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics
207 2N4402 Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. General Electric Solid State
208 2N4402 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics
209 2N4403 Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. General Electric Solid State
210 2N4403 PNP SILICON PLANAR EPITAXIAL TRANSISTORS Micro Electronics


Datasheets found :: 8675
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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