| No. |
Part Name |
Description |
Manufacturer |
| 181 |
24LC21T-I/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 182 |
24LC21T/SN |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design. Please see device 24LCS21AThe 24LC21 ... |
Microchip |
| 183 |
285D |
Foil Tantalum Replacement, Gelled-Electrolyte Sintered Anode Tantalex, for Operation to + 125°C, Hermetically-Sealed |
Vishay |
| 184 |
28C64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28C64A is a 64K bit CMOS Parallel EEPROM. The 28C64A is accessed like a static RAM for the read or write cycles without the need of external com |
Microchip |
| 185 |
28LV64A |
Note:This product has become 'Obsolete' and is no longer offered as a viable device for design.28LV64A is a 64K bit CMOS Parallel EEPROM organized as 8K words by 8 bits. The 28LV64A is accessed like a static RAM for the read or write cycle |
Microchip |
| 186 |
2931-125 |
High power silicon bipolar NPN transistor designed for medium pulse S-Band radar output and driver applications |
SGS Thomson Microelectronics |
| 187 |
2EL2 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
| 188 |
2EL3 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
| 189 |
2EL4 |
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS |
Power Innovations |
| 190 |
2N3118 |
Triple-diffused planar transistor of the silicon NPN type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment |
RCA Solid State |
| 191 |
2N322 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 192 |
2N323 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 193 |
2N324 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 194 |
2N3262 |
Triple-diffused planar transistor of the silicon NPN type intended for high-voltage, high-frequency pulse ampliers |
RCA Solid State |
| 195 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 196 |
2N3375 |
Silicon Epitaxial Planar Overlay Transistor, collector connected to the case, intended for VHF/UHF transmitting |
Philips |
| 197 |
2N3632 |
Silicon Epitaxial Planar Overlay Transistor, intended for VHF transmitting |
Philips |
| 198 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
| 199 |
2N4212 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 200 |
2N4213 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 201 |
2N4214 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 202 |
2N4215 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 203 |
2N4216 |
PNPN thyristor (silicon controlled rectifier) designed for operation in mA/µA signal or detection circuits |
Motorola |
| 204 |
2N4428 |
Epitaxial planar NPN transistor designed for VHF-UHF class C amplifier output stages in military an industrial communications applications |
SGS-ATES |
| 205 |
2N4932 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 206 |
2N4933 |
Epitaxial silicon NPN planar RF power transistor of the overlay emitter electrode construction |
RCA Solid State |
| 207 |
2N508 |
PNP germanium transistor for audio driver and low power output service in entertainment equipment |
Motorola |
| 208 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
| 209 |
2N700 |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
| 210 |
2N700A |
PNP germanium mesa transistor for oscillator, frequency multiplier, wide-band mixer and wide-band amplifier applications |
Motorola |
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