| No. |
Part Name |
Description |
Manufacturer |
| 181 |
JM38510R76305S2A |
4-Bit Up/Down Counter |
National Semiconductor |
| 182 |
JM38510R76305SE |
4-Bit Up/Down Counter |
National Semiconductor |
| 183 |
JM38510R76305SEA |
4-Bit Up/Down Counter |
National Semiconductor |
| 184 |
JM38510R76305SEA |
4-Bit Up/Down Counter |
National Semiconductor |
| 185 |
JM38510R76305SF |
4-Bit Up/Down Counter |
National Semiconductor |
| 186 |
JM38510R76305SFA |
4-Bit Up/Down Counter |
National Semiconductor |
| 187 |
JM38510R76305SFA |
4-Bit Up/Down Counter |
National Semiconductor |
| 188 |
JM38510R76506B2 |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 189 |
JM38510R76506BR |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 190 |
JM38510R76506BS |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 191 |
JM38510R76506S2 |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 192 |
JM38510R76506SR |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 193 |
JM38510R76506SS |
8-Input Universal Shift/Storage Register with Common Parallel I/O Pins |
National Semiconductor |
| 194 |
K4R761869A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
| 195 |
K4R761869A-F |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 196 |
K4R761869A-FBCCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 197 |
K4R761869A-FCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 198 |
K4R761869A-FCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 199 |
K4R761869A-GCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 200 |
K4R761869A-GCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 201 |
K4R761869A-GCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
| 202 |
MBR760 |
Through-Hole Schottky Rectifiers |
Diodes |
| 203 |
MBR760 |
Schottky Rectifier |
Fairchild Semiconductor |
| 204 |
MBR760 |
SCHOTTKY RECTIFIER |
General Semiconductor |
| 205 |
MBR760 |
7.5 Amp Schottky Barrier Rectifier 20 to 60 Volts |
Micro Commercial Components |
| 206 |
MBR760 |
Schottky Rectifier |
Microsemi |
| 207 |
MBR760 |
Rectifier: Schottky |
Taiwan Semiconductor |
| 208 |
MBR760 |
Schottky Barrier Rectifier, Forward Current 7.5A |
Vishay |
| 209 |
MR760 |
STANDARD RECOVERY RECTIFIERS |
Micro Commercial Components |
| 210 |
MR760 |
HIGH CURRENT LEAD MOUNTED SILICON RECTIFIERS 50-1000 VOLTS DIFFUSED JUNCTION |
Motorola |
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