No. |
Part Name |
Description |
Manufacturer |
181 |
25LC160/SN |
The 25LC160 is a 16K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) ... |
Microchip |
182 |
25LC160T-I/SN |
The 25LC160 is a 16K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) ... |
Microchip |
183 |
25LC160T/SN |
The 25LC160 is a 16K bit Serial Electrically Erasable PROM with memory accessed via a simple Serial Peripheral Interface (SPI) ... |
Microchip |
184 |
27256 |
256K (32k x 8) Bit NMOS UV Erasable PROM |
General Semiconductor |
185 |
27C080 |
8-Megabit 1M x 8 UV Erasable CMOS EPROM |
Atmel |
186 |
27C1028 |
CMOS 1048576 BIT UV ERASABLE READ ONLY MEMORY |
Fujitsu Microelectronics |
187 |
27C128 |
128K (16K x 8) CMOS UV Erasable PROM |
General Semiconductor |
188 |
27C16 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
189 |
27C16Q450 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
190 |
27C16Q550 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
191 |
27C16Q883 |
16,384-Bit (2048 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
192 |
27C256 |
256K CMOS UV Erasable PROM (32K X 8) |
General Semiconductor |
193 |
27C256 |
262,144-Bit (32,768 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
194 |
27C256 |
256K CMOS UV Erasable PROM (32K X 8) |
Philips |
195 |
27C256E250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
196 |
27C256E300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
197 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
198 |
27C256Q250_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 250ns |
National Semiconductor |
199 |
27C256Q300_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 300ns |
National Semiconductor |
200 |
27C256Q350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
201 |
27C4096 |
256K X 16 ELECTRICALLY ERASABLE EPROM |
Winbond Electronics |
202 |
27C64 |
65,536-Bit (8,192 x 8) UV Erasable CMOS PROM Military Qualified |
National Semiconductor |
203 |
27E040T-12 |
512K*8 bits high speed, low power electrically erasable EPROM |
Winbond Electronics |
204 |
28C256AJC-1 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 120 ns. |
Turbo IC |
205 |
28C256AJC-1 |
High speed 120 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
206 |
28C256AJC-2 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 150 ns. |
Turbo IC |
207 |
28C256AJC-2 |
High speed 150 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
208 |
28C256AJC-3 |
High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
Turbo IC |
209 |
28C256AJC-3 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
Turbo IC |
210 |
28C256AJC-4 |
High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. |
Turbo IC |
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