| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N2415 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 182 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 183 |
2N2416 |
Germanium ultra-high frequency transistor for very low-noise, high-gain amplifiers, oscillators, mixers, and frequency multipliers |
Motorola |
| 184 |
2N2483 |
High frequency transistor |
mble |
| 185 |
2N2483 |
High frequency transistor |
mble |
| 186 |
2N2484 |
High frequency transistor |
mble |
| 187 |
2N2484 |
High frequency transistor |
mble |
| 188 |
2N2573 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 189 |
2N2574 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 190 |
2N2575 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 191 |
2N2576 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 192 |
2N2577 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 193 |
2N2578 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 194 |
2N2579 |
Industrial-type, silicon controlled rectifier in a diamond package for applications requiring a high surge-current rating or low thermal resistance |
Motorola |
| 195 |
2N2857CSM |
HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 196 |
2N2904 |
Low frequency transistor |
mble |
| 197 |
2N2904A |
Low frequency transistor |
mble |
| 198 |
2N2905 |
Low frequency transistor |
mble |
| 199 |
2N2905A |
Low frequency transistor |
mble |
| 200 |
2N2906 |
Low frequency transistor |
mble |
| 201 |
2N2906A |
Low frequency transistor |
mble |
| 202 |
2N2907 |
Low frequency transistor |
mble |
| 203 |
2N2907A |
Low frequency transistor |
mble |
| 204 |
2N2912 |
PNP high-speed, high-frequency power transistor |
Motorola |
| 205 |
2N3019 |
HIGH CURRENT, HIGH FREQUENCY AMPLIFIERS |
SGS Thomson Microelectronics |
| 206 |
2N3019CSM |
HIGH FREQUENCY, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
SemeLAB |
| 207 |
2N3054 |
Silicon NPN single diffused Low frequency power tranzistor |
IPRS Baneasa |
| 208 |
2N3055 |
NPN Low frequency, power silicon transistor |
IPRS Baneasa |
| 209 |
2N3055 |
Silicon NPN Single Diffused Low Frequency Power Transistor |
IPRS Baneasa |
| 210 |
2N3055 |
Low frequency transistor |
mble |
| | | |
