| No. |
Part Name |
Description |
Manufacturer |
| 181 |
IRF232 |
Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 182 |
IRF232 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 183 |
IRF232 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 8A |
Siliconix |
| 184 |
IRF232R |
Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 185 |
IRF233 |
N-Channel Power MOSFETs/ 12A/ 150-200 V |
Fairchild Semiconductor |
| 186 |
IRF233 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
| 187 |
IRF233 |
8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 188 |
IRF233 |
Trans MOSFET N-CH 150V 7.3A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 189 |
IRF233 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
| 190 |
IRF233 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 8A |
Siliconix |
| 191 |
IRF234 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 192 |
IRF235 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 193 |
IRF236 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 194 |
IRF237 |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs |
Intersil |
| 195 |
IRF240 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 196 |
IRF240 |
200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 197 |
IRF240 |
18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET |
Intersil |
| 198 |
IRF240 |
Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3 |
New Jersey Semiconductor |
| 199 |
IRF240 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
| 200 |
IRF240 |
N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
SemeLAB |
| 201 |
IRF240 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 18A |
Siliconix |
| 202 |
IRF240-243 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 203 |
IRF240SMD |
N.CHANNEL POWER MOSFET |
SemeLAB |
| 204 |
IRF241 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 205 |
IRF241 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. |
General Electric Solid State |
| 206 |
IRF241 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
| 207 |
IRF241 |
N-CHANNEL POWER MOSFET |
Samsung Electronic |
| 208 |
IRF241 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 18A |
Siliconix |
| 209 |
IRF242 |
N-Channel Power MOSFETs/ 18A/ 150-200V |
Fairchild Semiconductor |
| 210 |
IRF242 |
16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs |
Intersil |
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