| No. |
Part Name |
Description |
Manufacturer |
| 181 |
IRF620 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 182 |
IRF620 |
MOSPOWER N-Channel Enhancement Mode Transistor 200V 5A |
Siliconix |
| 183 |
IRF620 |
OLD PRODUCT:NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 184 |
IRF6201 |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 185 |
IRF6201PBF |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 186 |
IRF6201TRPBF |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package |
International Rectifier |
| 187 |
IRF620B |
200V N-Channel MOSFET |
Fairchild Semiconductor |
| 188 |
IRF620B_FP001 |
200V N-Channel B-FET / Substitute of IRF620 & IRF620A |
Fairchild Semiconductor |
| 189 |
IRF620B_FP001 |
200V N-Channel B-FET / Substitute of IRF620 & IRF620A |
Fairchild Semiconductor |
| 190 |
IRF620B_FP001 |
200V N-Channel B-FET / Substitute of IRF620 & IRF620A |
Fairchild Semiconductor |
| 191 |
IRF620FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 192 |
IRF620FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 193 |
IRF620FI |
OLD PRODUCT:NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 194 |
IRF620PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 195 |
IRF620S |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 196 |
IRF620STRL |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 197 |
IRF620STRR |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 198 |
IRF621 |
N-Channel Power MOSFETs/ 7A/ 150-200V |
Fairchild Semiconductor |
| 199 |
IRF621 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 5.0A. |
General Electric Solid State |
| 200 |
IRF621 |
N-Channel Power MOSFET |
Samsung Electronic |
| 201 |
IRF621 |
MOSPOWER N-Channel Enhancement Mode Transistor 150V 5A |
Siliconix |
| 202 |
IRF6215 |
-150V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 203 |
IRF6215L |
-150V Single P-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 204 |
IRF6215LPBF |
-150V Single P-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 205 |
IRF6215PBF |
-150V Single P-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 206 |
IRF6215S |
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 207 |
IRF6215SPBF |
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 208 |
IRF6215STRL |
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 209 |
IRF6215STRR |
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
| 210 |
IRF6215STRRPBF |
-150V Single P-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
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