| No. |
Part Name |
Description |
Manufacturer |
| 181 |
PSD301-B-90JI |
Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 90ns |
WSI |
| 182 |
PSD301-B-90LI |
Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 90ns |
WSI |
| 183 |
PSD301-B-90MI |
Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 90ns |
WSI |
| 184 |
PSD301-B-90UI |
Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16 , 5V, 90ns |
WSI |
| 185 |
PSD301R-B-15J |
Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 150ns |
WSI |
| 186 |
PSD301R-B-70J |
Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 70ns |
WSI |
| 187 |
PSD301R-B-90JI |
Programmable system device, 14 PLD inputs, EPROM 256K, bus width x8 or x16, 5V, 90ns |
WSI |
| 188 |
Q62702-F1051 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.) |
Siemens |
| 189 |
Q62702-F1063 |
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) |
Siemens |
| 190 |
Q62702-F1086 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA) |
Siemens |
| 191 |
Q62702-F1316 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) |
Siemens |
| 192 |
Q62702-F1382 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Siemens |
| 193 |
Q62702-F1493 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) |
Siemens |
| 194 |
Q62702-F1503 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Siemens |
| 195 |
Q62702-F1574 |
NPN Silicon RF Transistor (For low-noise, high-gain broadband amplifier at colector current from 2mA to 28mA) |
Siemens |
| 196 |
Q62702-F1594 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA) |
Siemens |
| 197 |
Q62702-F774 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) |
Siemens |
| 198 |
ROB723 |
Voltage Regulator, output voltage adjustable from 2 to 37V |
CCSIT-CE |
| 199 |
T2300B |
2.5-A sensitive-gate silicon triac. Max 3 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 200 |
T2301B |
2.5-A sensitive-gate silicon triac. Max 4 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 201 |
T2302B |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 202 |
T2322B |
2.5-A sensitive-gate silicon triac. Max 10 mA gate, Vdrom 200 V. |
General Electric Solid State |
| 203 |
T2800B |
High voltage, 8-A silicon triac. Vdrom 200 V. |
General Electric Solid State |
| 204 |
T2802B |
High voltage, 8-A silicon triac. Vdrom 200 V. |
General Electric Solid State |
| 205 |
T6000B |
16-A silicon triac. Vdrom 200 V. |
General Electric Solid State |
| 206 |
T6001B |
16-A silicon triac. Vdrom 200 V. |
General Electric Solid State |
| 207 |
T6006B |
16-A silicon triac. Vdrom 200 V. |
General Electric Solid State |
| 208 |
UC723 |
Adjustable voltage regulator. Up to 150mA output current. Adjustable output voltage (from 2V to 37V). |
Contek Microelectronics |
| 209 |
UPD780053Y |
Mask ROM 24K bytes, CMOS 8-bit microcomputer 78K/0 series |
NEC |
| 210 |
UPD780053YGC(A)-XXX-8BT |
Mask ROM 24K bytes, CMOS 8-bit microcomputer 78K/0 series |
NEC |
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