| No. |
Part Name |
Description |
Manufacturer |
| 181 |
24LC41-P |
1K/4K2.5VDualMode/DualPortI2CSerialEEPROM |
Microchip |
| 182 |
29F52 |
8-Bit Registered Transceiver (Inverting) |
National Semiconductor |
| 183 |
29F53 |
8-Bit Registered Transceiver (Inverting) |
National Semiconductor |
| 184 |
2N2530N3 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 185 |
2N2530N8 |
300V N-channel enhancement - Mode vertical DMOS FET |
Supertex Inc |
| 186 |
2N2535N3 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 187 |
2N2535N5 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 188 |
2N2540N3 |
400V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 189 |
2N2540N5 |
400V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 190 |
2N2540N8 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 191 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 192 |
2N3959 |
NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications |
Motorola |
| 193 |
2N3960 |
NPN silicon transistor particularly well suited for high-speed current-mode logic switching applications |
Motorola |
| 194 |
2N5916 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 195 |
2N5917 |
High-Gain Silicon NPN Overlay Transistor, Warning - ceramic portion of these transistors contain BERYLLIUM OXIDE |
RCA Solid State |
| 196 |
2N6660 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 197 |
2N6661 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 198 |
2N7000 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Diodes |
| 199 |
2N7000 |
N-Channel Enhancement-Mode Vertical DMOS FET |
Supertex Inc |
| 200 |
2N7000 |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Zetex Semiconductors |
| 201 |
2N7000P |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Diodes |
| 202 |
2N7000P |
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
Zetex Semiconductors |
| 203 |
2N7002 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 204 |
2N7007 |
N-Channel Enhancement-Mode Vertical DMOS FET |
Supertex Inc |
| 205 |
2N7008 |
N-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 206 |
2SA1304 |
TRANSISTOR (POWER AMPLIFIER/ VERTICAL OUTPUT APPLICATIONS) |
TOSHIBA |
| 207 |
2SA1307 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 208 |
2SA1668 |
Silicon PNP Epitaxial Planar Transistor(TV Vertical Output, Audio Output Driver and General Purpose) |
Unknow |
| 209 |
2SA940 |
PNP EPITAXIAL SILICON TRANSISTOR(POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT) |
Wing Shing Computer Components |
| 210 |
2SA940A |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) POWER AMPLIFIER AND VERTICAL OUTPUT APPLICATIONS. |
TOSHIBA |
| | | |
