| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1U2 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 182 |
1U2G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 183 |
1U3 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 184 |
1U3G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 185 |
1U4 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 186 |
1U4G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 187 |
1U5 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 188 |
1U5G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 189 |
1U6 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 190 |
1U6G |
GLASS PASSIVATED JUNCTION ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 191 |
1U7 |
ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere) |
Panjit International Inc |
| 192 |
2001 |
CW Class C > 1 GHz |
Microsemi |
| 193 |
2001 |
2GHz 1W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 194 |
2003 |
CW Class C > 1 GHz |
Microsemi |
| 195 |
2003 |
2GHz 3W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 196 |
2005 |
CW Class C > 1 GHz |
Microsemi |
| 197 |
2005 |
2GHz 5W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 198 |
2010 |
CW Class C > 1 GHz |
Microsemi |
| 199 |
2010 |
2GHz 10W 28V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 200 |
2021-25 |
CW Class C > 1 GHz |
Microsemi |
| 201 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 202 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 203 |
20DL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 204 |
20DL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 205 |
20FL2CZ47A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 206 |
20FL2CZ51A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 207 |
20JL2C41 |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 208 |
20JL2C41A |
HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE SWITCHING MODE POWER SUPPLY APPLICATIONS CONVERTER & CHOPPER APPLICATION |
TOSHIBA |
| 209 |
210-91-306-41-001 |
Dual-in-line sockets Closed frame Solder tail |
Precid-Dip Durtal |
| 210 |
210-91-308-41-001 |
Dual-in-line sockets Closed frame Solder tail |
Precid-Dip Durtal |
| | | |
