| No. |
Part Name |
Description |
Manufacturer |
| 181 |
NTMFS4983NF |
Power MOSFET, 30 V, 106 A, Single N-Channel |
ON Semiconductor |
| 182 |
NTMFS4985NF |
Power MOSFET, 30 V, 65 A, Single N-Channel |
ON Semiconductor |
| 183 |
NTMS4916N |
Power MOSFET, 30 V, 11.6 A, N-Channel |
ON Semiconductor |
| 184 |
NTMS4917N |
Power MOSFET, 30 V, 10.5 A, N-Channel |
ON Semiconductor |
| 185 |
NTMS4920N |
Power MOSFET, 30 V, 17 A, N-Channel |
ON Semiconductor |
| 186 |
NTMS4935N |
Power MOSFET, 30 V, 16 A, N−Channel, SO−8 |
ON Semiconductor |
| 187 |
NTMS4937N |
Power MOSFET, 30 V, 13.6 A, N-Channel |
ON Semiconductor |
| 188 |
NTMS4939N |
Power MOSFET, 30 V, 12.5 A, N-Channel |
ON Semiconductor |
| 189 |
NTTFS4928N |
Power MOSFET, 30 V, 37 A, Single N-Channel |
ON Semiconductor |
| 190 |
NTTFS4929N |
Power MOSFET, 30 V, 34 A, Single N-Channel |
ON Semiconductor |
| 191 |
NTTFS4930N |
Power MOSFET, 30 V, 23 A, Single N-Channel |
ON Semiconductor |
| 192 |
NTTFS4932N |
30V, Single N-Channel, u8FL |
ON Semiconductor |
| 193 |
NTTFS4937N |
30V, Single N-Channel, u8FL |
ON Semiconductor |
| 194 |
NTTFS4939N |
30V, Single N-Channel, u8FL |
ON Semiconductor |
| 195 |
NTTFS4941N |
30V, Sinle N-Channel, u8FL |
ON Semiconductor |
| 196 |
NTTFS4943N |
30V, Single N-Channel, u8FL |
ON Semiconductor |
| 197 |
NTTFS4945N |
30V, Single N-Channel, u8FL |
ON Semiconductor |
| 198 |
NTTFS4985NF |
Power MOSFET, 30 V, 64 A, Single N-Channel |
ON Semiconductor |
| 199 |
NX8563LAS493-CC |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1549.31 nm. Frequency 193.50 THz. SC-UPC. |
NEC |
| 200 |
NX8563LAS493-CD |
Directly modulated InGaAsP MQW-DFB laser diode module for 2.5 GB/s, 110 km (1800 ps/nm) reach DWDM metro and CATV applications. ITU-T wavelength 1549.31 nm. Frequency 193.50 THz. SC-APC. |
NEC |
| 201 |
NX8567SAS493-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1549.315 nm. Frequency 193.50 THz. FC-UPC connector. |
NEC |
| 202 |
NX8567SAS493-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1549.315 nm. Frequency 193.50 THz. SC-UPC connector. |
NEC |
| 203 |
NX8567SAS497-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1549.715 nm. Frequency 193.45 THz. FC-UPC connector. |
NEC |
| 204 |
NX8567SAS497-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1549.715 nm. Frequency 193.45 THz. SC-UPC connector. |
NEC |
| 205 |
OD-S493 |
1310nm FP-LD Module |
NEC |
| 206 |
Q62702-S492 |
PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage) |
Siemens |
| 207 |
Q62702-S493 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
Siemens |
| 208 |
Q62702-S497 |
SIPMOS Small-Signal Transistor (P channel Enhancement mode Logic Level) |
Siemens |
| 209 |
Q62702-S499 |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
Siemens |
| 210 |
RF3S49092SM |
20A/10A/ 12V/ 0.060/0.140 Ohm/ Logic Level/ Complementary Power MOSFET |
Intersil |
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