| No. |
Part Name |
Description |
Manufacturer |
| 181 |
GS820H32T-133I |
133MHz 10ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 182 |
GS820H32T-138 |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 183 |
GS820H32T-138I |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 184 |
GS820H32T-150 |
150MHz 9ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 185 |
GS820H32T-150I |
150MHz 9ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 186 |
GS820H32T-4 |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 187 |
GS820H32T-4I |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 188 |
GS820H32T-5 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 189 |
GS820H32T-5I |
100MHz 12ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 190 |
GS820H32T-6 |
66MHz 18ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 191 |
GS820H32T-6I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 192 |
GS820V32Q |
80-133MHz 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 193 |
GS820V32T |
80-133MHz 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 194 |
HS820 |
5 V, +/-100 ppm, ECL crystal clock oscillator |
NEL Frequency Controls |
| 195 |
HTMS8201FTB |
HITAG µ (ISO14223) and (ISO11784/85) Transponder IC |
NXP Semiconductors |
| 196 |
HTMS8201FTK |
HITAG µ (ISO14223) and (ISO11784/85) Transponder IC |
NXP Semiconductors |
| 197 |
HTMS8201FUG |
HITAG µ (ISO14223) and (ISO11784/85) Transponder IC |
NXP Semiconductors |
| 198 |
IC42S8200 |
DYNAMIC RAM, SDRAM |
ICSI |
| 199 |
IRFS820B |
500V N-Channel MOSFET |
Fairchild Semiconductor |
| 200 |
IRFS820BT |
500V N-Channel B-FET / Substitute of IRFS820 & IRFS820A |
Fairchild Semiconductor |
| 201 |
IRFS820BT |
500V N-Channel B-FET / Substitute of IRFS820 & IRFS820A |
Fairchild Semiconductor |
| 202 |
IRFS820BT |
500V N-Channel B-FET / Substitute of IRFS820 & IRFS820A |
Fairchild Semiconductor |
| 203 |
MS820 |
8A, 20V ultra fast recovery rectifier |
MCC |
| 204 |
MS820 |
8 Amp Schottky Barrier Rectifier 20 to 100 Volts |
Micro Commercial Components |
| 205 |
RTH22ES820J |
Sensistor |
Microsemi |
| 206 |
RTH22ES820K |
Sensistor |
Microsemi |
| 207 |
RTH42ES820J |
Sensistor |
Microsemi |
| 208 |
RTH42ES820K |
Sensistor |
Microsemi |
| 209 |
S8201 |
SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Polyfet RF Devices |
| 210 |
S8201 |
GaAs epitaxial MESA GUNN diode |
TOSHIBA |
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