| No. |
Part Name |
Description |
Manufacturer |
| 181 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 182 |
2N3906-D |
General Purpose Transistors PNP Silicon |
ON Semiconductor |
| 183 |
2N3906-G |
General Purpose Transistor, VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-0.2A |
Comchip Technology |
| 184 |
2N3906RLRE |
General Purpose Transistors |
ON Semiconductor |
| 185 |
2N4032 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
| 186 |
2N4033 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
| 187 |
2N4036 |
PNP general purpose transistor. |
Fairchild Semiconductor |
| 188 |
2N4037 |
PNP general purpose transistor. |
Fairchild Semiconductor |
| 189 |
2N4123 |
NPN Silicon General Purpose Transistor 625mW |
Micro Commercial Components |
| 190 |
2N4123 |
General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
| 191 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 192 |
2N4123-D |
General Purpose Transistors NPN Silicon |
ON Semiconductor |
| 193 |
2N4123RLRA |
General Purpose Transistor - NPN |
ON Semiconductor |
| 194 |
2N4123RLRM |
General Purpose Transistor - NPN |
ON Semiconductor |
| 195 |
2N4124 |
NPN Silicon General Purpose Transistor 625mW |
Micro Commercial Components |
| 196 |
2N4124 |
General Purpose Transistor - NPN |
ON Semiconductor |
| 197 |
2N4124 |
NPN general purpose transistor |
Philips |
| 198 |
2N4124 |
General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 199 |
2N4126 |
PNP general purpose transistor |
Philips |
| 200 |
2N4234 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
| 201 |
2N4235 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
| 202 |
2N4236 |
GENERAL PURPOSE TRANSISTOR (PNP SILICON) |
Boca Semiconductor Corporation |
| 203 |
2N4237 |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 204 |
2N4238 |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 205 |
2N4239 |
GENERAL PURPOSE TRANSISTOR (NPN SILICON) |
Boca Semiconductor Corporation |
| 206 |
2N4264 |
General Purpose Transistor(NPN Silicon) |
ON Semiconductor |
| 207 |
2N4400 |
General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
| 208 |
2N4400 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 209 |
2N4401 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 210 |
2N4401RLRAG |
General Purpose Transistors |
ON Semiconductor |
| | | |
