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Datasheets for SUBST

Datasheets found :: 198
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No. Part Name Description Manufacturer
181 SSW4N60BTM 600V N-Channel B-FET / Substitute of SSW4N60A Fairchild Semiconductor
182 SSW7N60BTM 600V N-Channel B-FET / Substitute of SSW7N60A Fairchild Semiconductor
183 TA205XXX TA Series / Power Chip Resisters / Thick Film on Alumina Substrate Ohmite
184 TBA331 5 silicon NPN transistors on a common monolithic substrate SGS-ATES
185 TFPT Linear PTC Surface Mount Chip Thermistors, Nickel barrier with tin/lead wraparound terminations, Alumina substrate base with PTC thin film element, 0603, 0805, and 1206 sizes available Vishay
186 TR, TD High Voltage Resistors and Dividers, Outstanding Stability under Adverse Conditions, Stable Cermet Resistive Element Bonded to a High-Purity Alumina Substrate, Tough Epoxy-based Coating and High Voltage Stability Vishay
187 VSP1900 CCD Vertical Clock Driver with Electric-Shutter and CCD Substrate Bias Control Texas Instruments
188 VSP1900DBT CCD Vertical Clock Driver with Electric-Shutter and CCD Substrate Bias Control Texas Instruments
189 VSP1900DBTR CCD Vertical Clock Driver with Electric-Shutter and CCD Substrate Bias Control Texas Instruments
190 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
191 W4NRD0X-0000 Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
192 W4NRD8C-U000 Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
193 W4NXD8C-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
194 W4NXD8C-L000 Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
195 W4NXD8C-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
196 W4NXD8D-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
197 W4NXD8D-S000 Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER
198 W4NXD8G-0000 Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition CREE POWER


Datasheets found :: 198
Page: | 3 | 4 | 5 | 6 | 7 |



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