No. |
Part Name |
Description |
Manufacturer |
181 |
ARZ140M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
182 |
ARZ140M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
183 |
ARZ140M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
184 |
ARZ145T05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
185 |
ARZ145T12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
186 |
ARZ145T24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
187 |
ARZ220M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
188 |
ARZ220M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
189 |
ARZ220M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
190 |
ARZ225C05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
191 |
ARZ225C12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
192 |
ARZ225C24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage 24 V DC. |
Matsushita Electric Works(Nais) |
193 |
AT24C02A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
194 |
AT24C04A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
195 |
AT24C08A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
196 |
AT24C16A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
197 |
BPX34 |
Silicon P/N photo elements line containing 50 integrated elements for readout array with fine scanning |
AEG-TELEFUNKEN |
198 |
BPX58 |
Phototransistor line containing 10 silicon NPN transistors for readout arrays |
AEG-TELEFUNKEN |
199 |
DG884 |
8x4 Wideband Video Crosspoint Array |
Vishay |
200 |
DG884AM/883 |
8 x 4 Wideband Video Crosspoint Array |
Vishay |
201 |
DG884DN |
8 x 4 Wideband Video Crosspoint Array |
Vishay |
202 |
FT6110 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
203 |
FT6110D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
204 |
FT6111 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
205 |
FT6111D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
206 |
FT6112 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
207 |
FT6112D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
208 |
FT6120 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
209 |
FT6120D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
210 |
FT6121 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
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