| No. |
Part Name |
Description |
Manufacturer |
| 181 |
ARZ140M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 182 |
ARZ140M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 183 |
ARZ140M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement SP4T. Added function none. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 184 |
ARZ145T05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 185 |
ARZ145T12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 186 |
ARZ145T24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement SP4T. Added function: with termination. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 187 |
ARZ220M05 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 188 |
ARZ220M12 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 189 |
ARZ220M24 |
RZ-coaxial switche. Impedance 50 ohm. Contact arrangement DPDT. Added function bypass. Operation voltage, 24 V DC. |
Matsushita Electric Works(Nais) |
| 190 |
ARZ225C05 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 5 V DC. |
Matsushita Electric Works(Nais) |
| 191 |
ARZ225C12 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage, 12 V DC. |
Matsushita Electric Works(Nais) |
| 192 |
ARZ225C24 |
RZ-coaxial switche. Impedance 75 ohm. Contact arrangement transfer or DPDT. Added function: transfer. Operation voltage 24 V DC. |
Matsushita Electric Works(Nais) |
| 193 |
AT24C02A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 194 |
AT24C04A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 195 |
AT24C08A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 196 |
AT24C16A |
2/4/8/16K, 2-Wire Bus Serial EEPROM. Utilizes different Array Protection compared to the AT24C02/04/08 |
Atmel |
| 197 |
BPX34 |
Silicon P/N photo elements line containing 50 integrated elements for readout array with fine scanning |
AEG-TELEFUNKEN |
| 198 |
BPX58 |
Phototransistor line containing 10 silicon NPN transistors for readout arrays |
AEG-TELEFUNKEN |
| 199 |
DG884 |
8x4 Wideband Video Crosspoint Array |
Vishay |
| 200 |
DG884AM/883 |
8 x 4 Wideband Video Crosspoint Array |
Vishay |
| 201 |
DG884DN |
8 x 4 Wideband Video Crosspoint Array |
Vishay |
| 202 |
FT6110 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 203 |
FT6110D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 204 |
FT6111 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 205 |
FT6111D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 206 |
FT6112 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 207 |
FT6112D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 208 |
FT6120 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 209 |
FT6120D |
Power MOS FET Arrays |
Fujitsu Microelectronics |
| 210 |
FT6121 |
Power MOS FET Arrays |
Fujitsu Microelectronics |
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