No. |
Part Name |
Description |
Manufacturer |
181 |
MAX17681EVKITE# |
Evaluation Kit for MAX17681 Isolated ±15V and ±7.5V Output Configuration |
MAXIM - Dallas Semiconductor |
182 |
MAX17681EVKITF |
Evaluation Kit for the MAX17681 Isolated +24V Output Configuration |
MAXIM - Dallas Semiconductor |
183 |
MAX17681EVKITF# |
Evaluation Kit for the MAX17681 Isolated +24V Output Configuration |
MAXIM - Dallas Semiconductor |
184 |
MDTXXA |
Circuit Configurations Available |
Infineon |
185 |
MID100-12A3 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
186 |
MID145-12A3 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
187 |
MID150-12A4 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
188 |
MID200-12A4 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
189 |
MID300-12A4 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
190 |
MID400-12E4 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
191 |
MID400-12E4T |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
192 |
MID550-12A4 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
193 |
MID75-12A3 |
IGBT Modules: Boost Configurated IGBT Modules |
IXYS |
194 |
NLSV1T240 |
1-Bit Configurable Dual-Supply Voltage Level Translator |
ON Semiconductor |
195 |
NLSV1T244 |
1 Bit Configurable Dual Supply Voltage Level Translator |
ON Semiconductor |
196 |
NLSV1T34 |
1-bit configurable dual-supply voltage level |
ON Semiconductor |
197 |
NLSV2T244 |
2-Bit Configurable Dual Supply Voltage Level Translator |
ON Semiconductor |
198 |
NLSX4014 |
NLSX4014 4 Bit Configurable Dual−Supply Bidirectional Voltage Level Translator |
ON Semiconductor |
199 |
NLSX5002 |
2-Bit Configurable Dual Supply Level Translator |
ON Semiconductor |
200 |
NLSX5012 |
2-Bit Configurable Dual-Supply Level Translator |
ON Semiconductor |
201 |
NM93C46AL |
1024-Bit Serial EEPROM 64 x 16-Bit or 128 x 8-Bit Configurable with Extended Voltage (2.7V to 5.5V) MICROWIRE(TM) Bus Interface |
National Semiconductor |
202 |
Q62702-A1084 |
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) |
Siemens |
203 |
Q62702-A1145 |
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
204 |
Q62702-A1270 |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
Siemens |
205 |
S93VP462P-2.7 |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 2.7V to 5.5V |
SUMMIT Microelectronics |
206 |
S93VP462P-A |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 4.5V to 5.5V |
SUMMIT Microelectronics |
207 |
S93VP462P-B |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 4.5V to 5.5V |
SUMMIT Microelectronics |
208 |
S93VP462S-2.7 |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 2.7V to 5.5V |
SUMMIT Microelectronics |
209 |
S93VP462S-A |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 4.5V to 5.5V |
SUMMIT Microelectronics |
210 |
S93VP462S-B |
1K-bit microwire memory, 8-bit configuration, operating voltage range= 4.5V to 5.5V |
SUMMIT Microelectronics |
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