No. |
Part Name |
Description |
Manufacturer |
181 |
2N3578 |
P-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
182 |
2N3608 |
P-Channel FIELD-EFFECT TRANSISTOR MOS FET |
Motorola |
183 |
2N3609 |
P-Channel FIELD-EFFECT TRANSISTOR MOS FET |
Motorola |
184 |
2N3610 |
P-Channel FIELD-EFFECT TRANSISTOR MOS FET |
Motorola |
185 |
2N3631 |
N-Channel FIELD-EFFECT TRANSISTOR MOS FET |
Motorola |
186 |
2N3684 |
N-Channel FIELD-EFFECT TRANSISTOR Junction FET |
Motorola |
187 |
2N3685 |
N-Channel Junction FET (Field-Effect Transistor) |
Motorola |
188 |
2N3686 |
N-Channel Junction (Field-Effect Transistor) |
Motorola |
189 |
2N3687 |
N-Channel Junction (Field-Effect Transistor) |
Motorola |
190 |
2N3695 |
P-Channel Junction (Field-Effect Transistor) |
Motorola |
191 |
2N3696 |
P-Channel Junction (Field-Effect Transistor) |
Motorola |
192 |
2N3697 |
P-Channel Junction (Field-Effect Transistor) |
Motorola |
193 |
2N3698 |
P-Channel Junction (Field-Effect Transistor) |
Motorola |
194 |
2N3724 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
195 |
2N3725 |
High speed NPN silicon planar epitaxial High-Voltage, High-Current Transistor |
ITT Semiconductors |
196 |
2N3796 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
197 |
2N3796 |
N-Channel MOS (Field-Effect Transistor) |
Motorola |
198 |
2N3797 |
Silicon N-channel MOS field-effect transistor designed for low-power applications in the audio frequency range |
Motorola |
199 |
2N3797 |
N-Channel MOS (Field-Effect Transistor) |
Motorola |
200 |
2N3819 |
Field effect transistor N-channel |
mble |
201 |
2N3819 |
N-Channel Junction (Field-Effect Transistor) |
Motorola |
202 |
2N3819 |
N channel field effect transistor (epoxy can) |
SESCOSEM |
203 |
2N3820 |
P-Channel Junction (Field-Effect Transistor) |
Motorola |
204 |
2N3820 |
P-Channel Silicon Junction Field-Effect Transistor |
Texas Instruments |
205 |
2N3821 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
206 |
2N3821 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
207 |
2N3821 |
N-Channel Junction (Field-Effect Transistor) |
Motorola |
208 |
2N3821 |
N channel field effect transistor (metal can) |
SESCOSEM |
209 |
2N3822 |
N-Channel silicon junction field-effect transistor |
InterFET Corporation |
210 |
2N3822 |
N-channel junction silicon field-effect transistor designed for audio amplifier, chopper and switching applications |
Motorola |
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