| No. |
Part Name |
Description |
Manufacturer |
| 181 |
EN29F800T-45TI |
8 Megabit (1024K x 8-bit/512K x 16-bit) flach memory. Boot sector flash memory, CMOS 5.0 volt only. Speed 45ns. Top sector. |
Eon Silicon Solution |
| 182 |
EN29LV400AT-45RBC |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
Eon Silicon Solution |
| 183 |
EN29LV400AT-45RBCP |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
Eon Silicon Solution |
| 184 |
EN29LV400AT-45RBI |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
Eon Silicon Solution |
| 185 |
EN29LV400AT-45RBIP |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
Eon Silicon Solution |
| 186 |
EN29LV400AT-45RTC |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
Eon Silicon Solution |
| 187 |
EN29LV400AT-45RTCP |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
Eon Silicon Solution |
| 188 |
EN29LV400AT-45RTI |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
Eon Silicon Solution |
| 189 |
EN29LV400AT-45RTIP |
4 Megabit (512K X 8-bit / 256K X 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only |
Eon Silicon Solution |
| 190 |
EWS1500T-48 |
Single output 1500W ~ 5000W |
DENSEI-LAMBDA |
| 191 |
EWS3000T-48 |
Single output 1500W ~ 5000W |
DENSEI-LAMBDA |
| 192 |
GS81032AT-4 |
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 193 |
GS81032AT-4I |
11ns 117MHz 32K x 32 1Mb synchronous burst SRAM |
GSI Technology |
| 194 |
GS82032AT-4 |
64K x 32 2M Synchronous Burst SRAM |
GSI Technology |
| 195 |
GS82032AT-4I |
64K x 32 2M Synchronous Burst SRAM |
GSI Technology |
| 196 |
GS82032T-4 |
64K x 32 2M Synchronous Burst SRAM |
GSI Technology |
| 197 |
GS82032T-4I |
64K x 32 2M Synchronous Burst SRAM |
GSI Technology |
| 198 |
GS820E32AT-4 |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 199 |
GS820E32AT-4I |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 200 |
GS820E32T-4 |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 201 |
GS820E32T-4I |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 202 |
GS820H32AT-4 |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 203 |
GS820H32AT-4I |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 204 |
GS820H32T-4 |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 205 |
GS820H32T-4I |
117MHz 11ns 64K x 32 2M synchronous burst SRAM |
GSI Technology |
| 206 |
GVT71256D36T-4.4 |
256K x 36 pipelined SRAM, 225MHz |
Cypress |
| 207 |
GVT71512D18T-4.4 |
512K x 18 pipelined SRAM, 225MHz |
Cypress |
| 208 |
HI-8282JT-44 |
ARINC 429 SERIAL TRANSMITTER AND DUAL RECEIVER |
Holt Integrated Circuits |
| 209 |
HM530281RTT-45 |
45ns; V(cc): -1.0 to +7.0V; 1W; ; 331,776-word x 8-bit flame memory |
Hitachi Semiconductor |
| 210 |
HM530281TT-45 |
331,776 WORD X 8 BIT FRAME MEMORY |
Hitachi Semiconductor |
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