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Datasheets for TA O

Datasheets found :: 803
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No. Part Name Description Manufacturer
181 K4E160812D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
182 K4E160812D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. Samsung Electronic
183 K4E170411D 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
184 K4E170411D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
185 K4E170411D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
186 K4E170412D 4M x 4Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
187 K4E170412D-B 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
188 K4E170412D-F 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
189 K4E170811D 2M x 8Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
190 K4E170811D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
191 K4E170811D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
192 K4E170812D 2M x 8Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
193 K4E170812D-B 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
194 K4E170812D-F 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
195 K4E171611D 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
196 K4E171611D-J 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
197 K4E171611D-T 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. Samsung Electronic
198 K4E171612D 1M x 16Bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
199 K4E171612D-J 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
200 K4E171612D-T 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. Samsung Electronic
201 K4E640412D 16M x 4bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
202 K4E640412D-JC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. Samsung Electronic
203 K4E640412D-TC_L 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. Samsung Electronic
204 K4E640812B 8M x 8bit CMOS Dynamic RAM with Extended Data Out Samsung Electronic
205 K4E640812B-JC-45 8M x 8bit CMOS dynamic RAM with extended data out, 45ns Samsung Electronic
206 K4E640812B-JC-5 8M x 8bit CMOS dynamic RAM with extended data out, 50ns Samsung Electronic
207 K4E640812B-JC-6 8M x 8bit CMOS dynamic RAM with extended data out, 60ns Samsung Electronic
208 K4E640812B-JCL-45 8M x 8bit CMOS dynamic RAM with extended data out, 45ns Samsung Electronic
209 K4E640812B-JCL-5 8M x 8bit CMOS dynamic RAM with extended data out, 50ns Samsung Electronic
210 K4E640812B-JCL-6 8M x 8bit CMOS dynamic RAM with extended data out, 60ns Samsung Electronic


Datasheets found :: 803
Page: | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 |



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