| No. |
Part Name |
Description |
Manufacturer |
| 181 |
1N5369B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 182 |
1N5369B |
51 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 183 |
1N5369B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 184 |
1N537 |
Diffused-Junction Silicon Rectifier, flanged-case, axial-lead-type |
RCA Solid State |
| 185 |
1N5370B |
Glass passivated junction silicon zener diode. Power 5.0 Watt. Vz @ Izt = 56V, Izt =20mA |
Panjit International Inc |
| 186 |
1N5370B |
56 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 187 |
1N5370B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 188 |
1N5371B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 189 |
1N5371B |
60 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 190 |
1N5371B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 191 |
1N5372B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 192 |
1N5372B |
62 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 193 |
1N5372B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 194 |
1N5373B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 195 |
1N5373B |
68 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 196 |
1N5373B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 197 |
1N5374B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 198 |
1N5374B |
75 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 199 |
1N5374B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 200 |
1N5375B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 201 |
1N5375B |
82 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 202 |
1N5375B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 203 |
1N5376B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 204 |
1N5376B |
87 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 205 |
1N5376B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 206 |
1N5377B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 207 |
1N5377B |
91 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
| 208 |
1N5377B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE |
TRSYS |
| 209 |
1N5378B |
GLASS PASSIVATED JUNCTION SILICON ZENER DIODE(VOLTAGE- 11 to 200 Volts Power - 5.0 Watts) |
Panjit International Inc |
| 210 |
1N5378B |
100 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
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