No. |
Part Name |
Description |
Manufacturer |
181 |
STP30NF20 |
N-channel 200 V, 0.065 Ohm, 30 A, TO-220 STripFET(TM) Power MOSFET |
ST Microelectronics |
182 |
STP30NM30N |
N-channel 300V - 0.078Ohm - 30A - TO-220 |
ST Microelectronics |
183 |
STP30NS15L |
N-CHANNEL 150V - 0.085 OHM - 10A TO-220FP MESH OVERLAY POWER MOSFET |
ST Microelectronics |
184 |
STP30NS15LFP |
N-CHANNEL 150V - 0.085 OHM - 10A TO-220FP MESH OVERLAY POWER MOSFET |
ST Microelectronics |
185 |
STP310N10F7 |
N-channel 100 V, 2.3 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a TO-220 package |
ST Microelectronics |
186 |
STP315N10F7 |
Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package |
ST Microelectronics |
187 |
STP31N65M5 |
N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
188 |
STP32N05L |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
189 |
STP32N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
190 |
STP32N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
191 |
STP32N05LFI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
192 |
STP32N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
193 |
STP32N06L |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
194 |
STP32N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
195 |
STP32N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
196 |
STP32N06LFI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
197 |
STP32N06LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
198 |
STP32N06LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
199 |
STP32N65M5 |
N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-220 |
ST Microelectronics |
200 |
STP32NM50N |
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-220 package |
ST Microelectronics |
201 |
STP33N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
202 |
STP33N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
203 |
STP33N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
204 |
STP33N10FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
205 |
STP33N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
206 |
STP33N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
207 |
STP33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220 package |
ST Microelectronics |
208 |
STP34N65M5 |
N-channel 650 V, 0.09 Ohm, 28 A MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
209 |
STP34NM60N |
N-channel 600 V, 0.092 Ohm, 29 A, MDmesh(TM) II Power MOSFET in TO-220 |
ST Microelectronics |
210 |
STP34NM60ND |
N-channel 600 V, 0.097 Ohm, 29 A FDmesh(TM) II Power MOSFET (with fast diode) TO-220 |
ST Microelectronics |
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