| No. |
Part Name |
Description |
Manufacturer |
| 181 |
OP750A |
NPN Pho totransistor with Base- Emitter Resistor |
Optek Technology |
| 182 |
OP750B |
NPN Pho totransistor with Base- Emitter Resistor |
Optek Technology |
| 183 |
OP750C |
NPN Pho totransistor with Base- Emitter Resistor |
Optek Technology |
| 184 |
OP750D |
NPN Pho totransistor with Base- Emitter Resistor |
Optek Technology |
| 185 |
PBSM5240PF |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
Nexperia |
| 186 |
PBSM5240PF |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
NXP Semiconductors |
| 187 |
PBSM5240PFH |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
Nexperia |
| 188 |
PBSM5240PFH |
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET |
NXP Semiconductors |
| 189 |
PHD13003C |
NPN power transistor with integrated diode |
NXP Semiconductors |
| 190 |
PHD13005 |
NPN power transistor with integrated diode |
NXP Semiconductors |
| 191 |
PT550 |
TO-18 Type Phototransistor with Base Terminal |
SHARP |
| 192 |
PT550F |
TO-18 Type Phototransistor with Base Terminal |
SHARP |
| 193 |
PZT2222 |
NPN Silicon Switching Transistor with... |
Infineon |
| 194 |
PZT2907A |
PNP Silicon Switching Transistor with... |
Infineon |
| 195 |
PZT3904 |
Switching Transistors - NPN Silicon Switching Transistor with high current gain |
Infineon |
| 196 |
Q62702-F1129 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 197 |
Q62702-F1177 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 198 |
Q62702-F1586 |
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor) |
Siemens |
| 199 |
Q62702-F1772 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) |
Siemens |
| 200 |
RCA-2N6093 |
75W (PEP) Emitter-Ballasted Overlay Transistor with Temperature-Sensing Diode |
RCA Solid State |
| 201 |
RT1N137L |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 202 |
RT1N137P |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 203 |
RT1N141C |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 204 |
RT1N141M |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 205 |
RT1N141S |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 206 |
RT1N141T |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 207 |
RT1N141U |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 208 |
RT1N431C |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 209 |
RT1N431M |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
| 210 |
RT1N431S |
Transistor with resistor for switching application. Silicon NPN epitaxial type. |
Isahaya Electronics Corporation |
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