| No. |
Part Name |
Description |
Manufacturer |
| 181 |
SSTU32866EC/G |
1.8 V 25-bit 1:1 or 14-bit 1:2 configurable registered buffer with parity for DDR2 RDIMM applications |
Philips |
| 182 |
TU32 |
300A silicon rectifier diode |
IPRS Baneasa |
| 183 |
TU32 |
300A 400V Silicon Rectifier Diode |
IPRS Baneasa |
| 184 |
TU320 |
P-Germanium tunnel diode, datasheet in german language |
Siemens |
| 185 |
TU320 10 |
Germanium Tunnel Diode |
Siemens |
| 186 |
TU320 5 |
Germanium Tunnel Diode |
Siemens |
| 187 |
TU320/10 |
Germanium Tunnel Diode |
Siemens |
| 188 |
TU320/10 |
Germanium tunnel diode |
Siemens |
| 189 |
TU320/10 |
P-Germanium tunnel diode, datasheet in german language |
Siemens |
| 190 |
TU320/5 |
Germanium Tunnel Diode |
Siemens |
| 191 |
TU320/5 |
Germanium tunnel diode |
Siemens |
| 192 |
TU320/5 |
P-Germanium tunnel diode, datasheet in german language |
Siemens |
| 193 |
TU32A |
300A 400V Silicon Rectifier Diode |
IPRS Baneasa |
| 194 |
TU32B |
300A 400V Silicon Rectifier Diode |
IPRS Baneasa |
| 195 |
TU32C |
300A 400V Silicon Rectifier Diode |
IPRS Baneasa |
| 196 |
TU32D |
300A 400V Silicon Rectifier Diode |
IPRS Baneasa |
| 197 |
TU32E |
300A 400V Silicon Rectifier Diode |
IPRS Baneasa |
| 198 |
TU32F |
300A 400V Silicon Rectifier Diode |
IPRS Baneasa |
| 199 |
TU32R |
300A silicon rectifier diode |
IPRS Baneasa |
| 200 |
U320 |
N-Channel JFET - RF, VHF, UHF amplifiers |
National Semiconductor |
| 201 |
U321 |
N-Channel JFET - RF, VHF, UHF amplifiers |
National Semiconductor |
| 202 |
U322 |
N-Channel JFET - RF, VHF, UHF amplifiers |
National Semiconductor |
| 203 |
U323A |
323 Pin Ceramic Pin Grid Array |
National Semiconductor |
| 204 |
U3280M |
Contactless transponder interface for microcontroller |
Atmel |
| | | |
