| No. |
Part Name |
Description |
Manufacturer |
| 181 |
CXY17C |
Gunn effect diode |
mble |
| 182 |
CXY17D |
Gunn effect diode |
mble |
| 183 |
CXY17E |
Gunn effect diode |
mble |
| 184 |
CXY18A |
Gunn effect diode |
mble |
| 185 |
CXY18B |
Gunn effect diode |
mble |
| 186 |
CXY18C |
Gunn effect diode |
mble |
| 187 |
CXY18D |
Gunn effect diode |
mble |
| 188 |
CXY18E |
Gunn effect diode |
mble |
| 189 |
CXY19 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 190 |
CXY19 |
Gunn Effect Device |
Philips |
| 191 |
CXY19A |
Gunn Effect Device |
Philips |
| 192 |
CXY19B |
Gunn Effect Device |
Philips |
| 193 |
CXY20 |
Ga As bulk effect devices employing the Gunn Effect to produce C.W. oscillations at microwave frequency |
Mullard |
| 194 |
CXY21 |
Gunn Effect Device |
Philips |
| 195 |
CXY21A |
Gunn Effect Device |
Philips |
| 196 |
CXY24A |
GUNN Effect Device |
Philips |
| 197 |
CXY24B |
GUNN Effect Device |
Philips |
| 198 |
GAO10 |
Gunn diode for the frequency range 8 to 14 GHz, datasheet in german language |
Siemens |
| 199 |
GAO100C-1D |
Gallium arsenide GUNN element |
Siemens |
| 200 |
GAO100C-1D |
Gallium arsenide GUNN element |
Siemens |
| 201 |
GAO10C-1A |
Gallium arsenide GUNN element |
Siemens |
| 202 |
GAO10C-1A |
Gallium arsenide GUNN element |
Siemens |
| 203 |
GAO10C-1A |
Gallium-arsenide GUNN device |
Siemens |
| 204 |
GAO10D-1A |
Gallium arsenide GUNN element |
Siemens |
| 205 |
GAO10D-1A |
Gallium arsenide GUNN element |
Siemens |
| 206 |
GAO10D-1A |
Gallium-arsenide GUNN device |
Siemens |
| 207 |
GAO10E-1A |
Gallium arsenide GUNN element |
Siemens |
| 208 |
GAO10E-1A |
Gallium arsenide GUNN element |
Siemens |
| 209 |
GAO10E-1A |
Gallium-arsenide GUNN device |
Siemens |
| 210 |
GAO10F-1A |
Gallium arsenide GUNN element |
Siemens |
| | | |
