| No. |
Part Name |
Description |
Manufacturer |
| 181 |
74LV259N |
8-bit addressable latch |
Philips |
| 182 |
74LV259PW |
8-bit adressable latch |
NXP Semiconductors |
| 183 |
74LV259PW |
8-bit addressable latch |
Philips |
| 184 |
74LV259PWDH |
8-bit addressable latch |
Philips |
| 185 |
AEV25012 |
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
| 186 |
AEV25024 |
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact. |
Matsushita Electric Works(Nais) |
| 187 |
AEV25112 |
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact. |
Matsushita Electric Works(Nais) |
| 188 |
AEV25124 |
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: a contact. |
Matsushita Electric Works(Nais) |
| 189 |
AEV25312 |
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
| 190 |
AEV25324 |
EV-relay. Compact but cut off DC power current, power capsule contact relay. Coil voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact. |
Matsushita Electric Works(Nais) |
| 191 |
AM29LV2562M |
512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
Advanced Micro Devices |
| 192 |
AM29LV2562MH120RPII |
512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
Advanced Micro Devices |
| 193 |
AM29LV2562ML120RPII |
512 Megabit (16 M x 32-Bit/32 M x 16-Bit) MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
Advanced Micro Devices |
| 194 |
AM29LV256M |
256 Megabit (16 M x 16-Bit/32 M x 8-Bit) MirrorBitTM 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control |
Advanced Micro Devices |
| 195 |
AME1505ACBV250 |
High Power BiPolar Linear LDO |
AME |
| 196 |
AME1505ACBV250Z |
High Power BiPolar Linear LDO |
Analog Microelectronics |
| 197 |
AME1505ACDV250 |
High Power BiPolar Linear LDO |
AME |
| 198 |
AME1505ACDV250Z |
High Power BiPolar Linear LDO |
Analog Microelectronics |
| 199 |
AME8816AEDV250 |
1.5A CMOS LDO |
AME |
| 200 |
AME8816AEDV250 |
1.5A CMOS LDO |
Analog Microelectronics |
| 201 |
AME8826AEDV250 |
1.55A CMOS LDO |
AME |
| 202 |
AME8833AEEV250L |
High PSRR, 150mA CMOS LDO |
AME |
| 203 |
AME8833AEEV250Y |
High PSRR, 150mA CMOS LDO |
Analog Microelectronics |
| 204 |
AME8833AEEV250Z |
High PSRR, 150mA CMOS LDO |
Analog Microelectronics |
| 205 |
AME8833AEIV250 |
High PSRR, 150mA CMOS LDO |
AME |
| 206 |
AME8833AEIV250L |
High PSRR, 150mA CMOS LDO |
Analog Microelectronics |
| 207 |
AME8833AEIV250Y |
High PSRR, 150mA CMOS LDO |
Analog Microelectronics |
| 208 |
AME8833AEIV250Z |
High PSRR, 150mA CMOS LDO |
AME |
| 209 |
AME8833BEEV250L |
High PSRR, 150mA CMOS LDO |
Analog Microelectronics |
| 210 |
AME8833BEEV250Y |
High PSRR, 150mA CMOS LDO |
Analog Microelectronics |
| | | |
