| No. |
Part Name |
Description |
Manufacturer |
| 181 |
NJM2206 |
Low Power IF/AF PLL Circuit for Narrow Band FM Receiver |
New Japan Radio |
| 182 |
NJM2206D |
LOW POWER IF/AF PLL CIRCUIT FOR NARROW BAND FM RECEIVER |
New Japan Radio |
| 183 |
NJM2206M |
LOW POWER IF/AF PLL CIRCUIT FOR NARROW BAND FM RECEIVER |
New Japan Radio |
| 184 |
NJM2292 |
Narrow Band FM IF IC |
New Japan Radio |
| 185 |
NJM2292V |
NARROW BAND FM IF IC |
New Japan Radio |
| 186 |
NJM3357 |
Low Power Narrow Band FM IF |
New Japan Radio |
| 187 |
NJM3357D |
LOW POWER NARROW BAND FM IF |
New Japan Radio |
| 188 |
NJM3357M |
LOW POWER NARROW BAND FM IF |
New Japan Radio |
| 189 |
NJM3359 |
Low Power Narrow Band FM IF |
New Japan Radio |
| 190 |
NJM3359D |
LOW POWER NARROW BAND FM IF�� |
New Japan Radio |
| 191 |
NTE1104 |
Integrated Circuit Wide and Narrow Band Amp, FM/IF Limiter |
NTE Electronics |
| 192 |
NTE853 |
Integrated Circuit Low Power, Narrow Band, FM IF System |
NTE Electronics |
| 193 |
Q62702-A0043 |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
| 194 |
Q62702-A0062 |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
Siemens |
| 195 |
Q62702-A1004 |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
Siemens |
| 196 |
Q62702-A1028 |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
Siemens |
| 197 |
Q62702-A1028 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
| 198 |
Q62702-A1104 |
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 199 |
Q62702-A1198 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
| 200 |
Q62702-A504 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 201 |
Q62702-A66 |
Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) |
Siemens |
| 202 |
Q62702-A971 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.) |
Siemens |
| 203 |
Q62702-C2479 |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 204 |
Q62702-C2481 |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
| 205 |
Q62702-D1262 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 206 |
Q62702-D1263 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 207 |
Q62702-D1264 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 208 |
Q62702-D1271 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 209 |
Q62702-D1272 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| 210 |
Q62702-D1279 |
Silicon Schottky Diodes (Beam lead technology Low dimension High performance Low barrier) |
Siemens |
| | | |
