| No. |
Part Name |
Description |
Manufacturer |
| 181 |
DX32-80SE-CR2A |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 182 |
DX32-80SE-CR3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 183 |
DX32-80SE-LNA |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 184 |
DX32-80SW-CP3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 185 |
DX32-80SW-CR2A |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 186 |
DX32-80SW-CR3 |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 187 |
DX32-80SW-LNA |
DX SERIES HIGH-DENSITY I/O CONNECTORS |
Hirose Electric |
| 188 |
K7A203200B-QC(I)14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
| 189 |
K7A203200B-QC14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
| 190 |
K7A203600B-QC(I)14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
| 191 |
K7A203600B-QC14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
| 192 |
K7A403601B K7A403201B |
128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 193 |
MC74LCX32-D |
Low-Voltage CMOS Quad 2-Input OR Gate With 5 V-Tolerant Inputs |
ON Semiconductor |
| 194 |
MC74LVX32-D |
Quad 2-Input OR Gate With 5V Tolerant Inputs |
ON Semiconductor |
| 195 |
NS32GX32-20 |
High-Performance 32-Bit Embedded System Processor |
National Semiconductor |
| 196 |
NS32GX32-25 |
High-Performance 32-Bit Embedded System Processor |
National Semiconductor |
| 197 |
NS32GX32-30 |
High-Performance 32-Bit Embedded System Processor |
National Semiconductor |
| 198 |
UPD23C256112A |
256M-bit((512+16)bytex32-pagex2048-block) Serial type Mask ROM |
NEC |
| 199 |
UPD23C256112AGY-XXX-MJH |
256M-bit((512+16)bytex32-pagex2048-block) Serial type Mask ROM |
NEC |
| 200 |
UPD23C256112AGY-XXX-MKH |
256M-bit((512+16)bytex32-pagex2048-block) Serial type Mask ROM |
NEC |
| | | |
