No. |
Part Name |
Description |
Manufacturer |
181 |
BAT60A |
Schottky Diodes - Silicon AF Schottky rectifier diode with extreme low V_F drop |
Infineon |
182 |
BAT60A |
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply |
Siemens |
183 |
BAV45 |
Extremely low leakage and low capacitance diode (IR=10pA at VRRM) |
Mullard |
184 |
BAX25 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
185 |
BAX26 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
186 |
BAX27 |
Silicon-schottky barrier diodes for extreme fast switching and RF applications |
AEG-TELEFUNKEN |
187 |
BCM5721 |
NetXtreme Gigabit Ethernet Controller for Servers |
Broadcom |
188 |
BCM5751 |
NetXtreme Gigabit Ethernet Controller for Desktops |
Broadcom |
189 |
BCM5751M |
NetXtreme Gigabit Ethernet Controller for Mobile PCs |
Broadcom |
190 |
BCR400R |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
191 |
BCR400W |
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation) |
Siemens |
192 |
BFT66 |
Extremely low-noise NPN silicon broadband transistor |
Siemens |
193 |
BFT66 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
194 |
BFT66S |
Epitaxial planar NPN transistor intended for extremely low-noise telecom applications |
SGS-ATES |
195 |
BFT67 |
Extremely low-noise NPN silicon broadband transistor |
Siemens |
196 |
BFT67 |
EXTREMELY LOW NOISE NPN SILICON BROADBAND TRANSISTORS |
Siemens |
197 |
BSH111 |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
198 |
BSH121 |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
199 |
BSN20 |
N-channel TrenchMOS extremely low level FET |
Nexperia |
200 |
BSN20 |
N-channel TrenchMOS extremely low level FET |
NXP Semiconductors |
201 |
CMPTA44 |
NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR |
Central Semiconductor |
202 |
CMPTA46 |
SURFACE MOUNT NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR |
Central Semiconductor |
203 |
CMPTA96 |
SURFACE MOUNT PNP SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR |
Central Semiconductor |
204 |
CY7C1262XV18-366BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
205 |
CY7C1262XV18-450BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
206 |
CY7C1263XV18-600BZXC |
36-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
207 |
CY7C1263XV18-633BZXC |
36-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
208 |
CY7C1264XV18-366BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
209 |
CY7C1264XV18-450BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
210 |
CY7C1265XV18-600BZXC |
36-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
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