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Datasheets for INTEGRATED

Datasheets found :: 21889
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No. Part Name Description Manufacturer
18151 Q62702-A1160 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Siemens
18152 Q62702-A1161 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Siemens
18153 Q62702-A1162 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Siemens
18154 Q62702-A3470 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Siemens
18155 Q62702-A879 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Siemens
18156 Q62702-A961 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Siemens
18157 Q62702-A962 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Siemens
18158 Q62702-A963 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Siemens
18159 Q62702-A964 Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) Siemens
18160 Q62702-F1055 Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) Siemens
18161 Q62702-F1487 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network Siemens
18162 Q62702-F1498 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
18163 Q62702-F1613 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network Siemens
18164 Q62702-F1627 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
18165 Q62702-F1628 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) Siemens
18166 Q62702-F1665 Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) Siemens
18167 Q62702-M9 GaAs MMIC (GaAs mixer with integrated IF-amplifier for mobile communication) Siemens
18168 Q62702-P3010 Ternary PIN Photodiode in TO-Package with Integrated Optics Siemens
18169 Q62702-P3042 Ge-Avalanche Photodiode in TO Package with Integrated Optics Siemens
18170 QM100HA-H Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
18171 QM10HA-HB Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
18172 QM150HA-H Integrated Gate Bipolar Transistor (IGBT) Modules: 250V Mitsubishi Electric Corporation
18173 QPB9010 12 V, xPON Video Receiver with Integrated VCA Qorvo
18174 QPB9015 5 V, xPON Video Receiver with Integrated VCA Qorvo
18175 QPC1000 29 - 31 GHz Phase Shifter with Integrated SPDT Switch Qorvo
18176 QPF4518M 5 GHz 802.11a/n/ac Wi-Fi Integrated PA Module Qorvo
18177 QPF7200 2.4 GHz Wi-Fi Front-End Module with integrated BAW filtering Qorvo
18178 QPF7219 2.4 GHz Wi-Fi 6 Integrated Front End Module (iFEM) Qorvo
18179 QPF7221 2.4 GHz Wi-Fi Front End Module with integrated Coexistence BAW Qorvo
18180 QS5917T Low Skew CMOS PLL CLock Driver with Integrated Loop Filter IDT


Datasheets found :: 21889
Page: | 602 | 603 | 604 | 605 | 606 | 607 | 608 | 609 | 610 |



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