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Datasheets for MP

Datasheets found :: 2927
Page: | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 |
No. Part Name Description Manufacturer
1831 MAX6734KAZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1832 MAX6735KALTD3-T Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1833 MAX6735KARVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1834 MAX6735KASDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1835 MAX6735KASHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1836 MAX6735KASVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1837 MAX6735KASYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1838 MAX6735KATGD3-T Vcc1: 3.075 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1839 MAX6735KAVDD3-T Vcc1: 1.575 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1840 MAX6735KAVHD3-T Vcc1: 1.575 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1841 MAX6735KAWGD3-T Vcc1: 1.665 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1842 MAX6735KAYDD3-T Vcc1: 2.188 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1843 MAX6735KAYHD3-T Vcc1: 2.188 V, Vcc2: 1.313 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1844 MAX6735KAZGD3-T Vcc1: 2.313 V, Vcc2: 1.110 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1845 MAX6735KAZID3-T Vcc1: 2.313 V, Vcc2: 1.338 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1846 MAX6735KAZWD3-T Vcc1: 2.313 V, Vcc2: 1.665 V, active timeout period: 140 ms-280 ms, single/dual/triple-voltage mP supervisor circuit with independent watchdog output MAXIM - Dallas Semiconductor
1847 MAX6736XKLTD3-T Vcc1: 4.625 V, Vcc2: 3.075 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1848 MAX6736XKMRD3-T Vcc1: 4.375 V, Vcc2: 2.625 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1849 MAX6736XKMSD3-T Vcc1: 4.375 V, Vcc2: 2.925 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1850 MAX6736XKRDD3-T Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1851 MAX6736XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1852 MAX6736XKRHD3-T Vcc1: 2.625 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1853 MAX6736XKRVD3-T Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1854 MAX6736XKRYD3-T Vcc1: 2.625 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1855 MAX6736XKSDD3-T Vcc1: 2.925 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1856 MAX6736XKSFD3-T Vcc1: 2.925 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1857 MAX6736XKSHD3-T Vcc1: 2.925 V, Vcc2: 1.313 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1858 MAX6736XKSVD3-T Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1859 MAX6736XKSYD3-T Vcc1: 2.925 V, Vcc2: 2.188 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
1860 MAX6736XKTED3-T Vcc1: 3.075 V, Vcc2: 0.833 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor


Datasheets found :: 2927
Page: | 58 | 59 | 60 | 61 | 62 | 63 | 64 | 65 | 66 |



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