No. |
Part Name |
Description |
Manufacturer |
1831 |
JA1B-TM-AC115V-P |
JA-relay. 1 horse-power compact power relay. 1 form B. Coil voltage 115 V AC. Solder terminal. Up-grated contact rating type. |
Matsushita Electric Works(Nais) |
1832 |
JA1B-TMP-AC115V |
JA-relay. 1 horse-power compact power relay. 1 form B. Coil voltage 115 V AC. Solder terminal and PCB terminal. Standard type. |
Matsushita Electric Works(Nais) |
1833 |
JA1B-TMP-AC115V-P |
JA-relay. 1 horse-power compact power relay. 1 form B. Coil voltage 115 V AC. Solder terminal and PCB terminal. Up-grated contact rating type. |
Matsushita Electric Works(Nais) |
1834 |
JA1C-TM-AC115V |
JA-relay. 1 horse-power compact power relay. 1 form C. Coil voltage 115 V AC. Solder terminal. Standard type. |
Matsushita Electric Works(Nais) |
1835 |
JA1C-TM-AC115V-P |
JA-relay. 1 horse-power compact power relay. 1 form C. Coil voltage 115 V AC. Solder terminal. Up-grated contact rating type. |
Matsushita Electric Works(Nais) |
1836 |
JA1C-TMP-AC115V |
JA-relay. 1 horse-power compact power relay. 1 form C. Coil voltage 115 V AC. Solder terminal and PCB terminal. Standard type. |
Matsushita Electric Works(Nais) |
1837 |
JA1C-TMP-AC115V-P |
JA-relay. 1 horse-power compact power relay. 1 form C. Coil voltage 115 V AC. Solder terminal and PCB terminal. Up-grated contact rating type. |
Matsushita Electric Works(Nais) |
1838 |
JM38510/30602B2A |
4-Bit Parallel-Access Shift Registers |
Texas Instruments |
1839 |
JM38510/30602BEA |
4-Bit Parallel-Access Shift Registers |
Texas Instruments |
1840 |
JM38510/30602BFA |
4-Bit Parallel-Access Shift Registers |
Texas Instruments |
1841 |
JR1A-TM-AC115 |
SLIM TYPE POWER RELAYS |
Matsushita Electric Works(Nais) |
1842 |
JR1A-TM-AC115V |
JR-relay. Slim type power relay. 1 form A. Coil voltage 115 V AC. TM type. |
Matsushita Electric Works(Nais) |
1843 |
K246 |
N CHANNEL JUNCTION TYPE (FOR CONSTANT CURRENT/ IMPEDANCE CONVERTER AND DC-AC HIGH INPUT IMPEDANCE AMPLIFIER CIRCUIT APPLICATIONS) |
TOSHIBA |
1844 |
K4C89083AF-ACF5 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1845 |
K4C89083AF-ACF6 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1846 |
K4C89083AF-ACFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1847 |
K4C89093AF-ACF5 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1848 |
K4C89093AF-ACF6 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1849 |
K4C89093AF-ACFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1850 |
K4C89163AF-ACF5 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1851 |
K4C89163AF-ACF6 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1852 |
K4C89163AF-ACFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1853 |
K4C89183AF-ACF5 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1854 |
K4C89183AF-ACF6 |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1855 |
K4C89183AF-ACFB |
288Mb x18 Network-DRAM2 Specification |
Samsung Electronic |
1856 |
KP/MKP 375 |
Film/Foil, lacquered, 7,5-27,5mm pitch |
Vishay |
1857 |
KP460 |
Polypropylene Film Foil, axial type |
Vishay |
1858 |
KP461 |
Polypropylene Film Foil, axial type |
Vishay |
1859 |
KP462 |
Polypropylene Film Foil, axial type |
Vishay |
1860 |
KP463 |
Polypropylene Film Foil, axial type |
Vishay |
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