No. |
Part Name |
Description |
Manufacturer |
1831 |
BC848B-G |
Small Signal Transistor, VCBO=30V, VCEO=30V, VEBO=6V, IC=0.1A |
Comchip Technology |
1832 |
BC848B-G |
Small Signal Transistor, VCBO=30V, VCEO=30V, VEBO=6V, IC=0.1A |
Comchip Technology |
1833 |
BC848BW-G |
Small Signal Transistor, VCBO=30V, VCEO=30V, VEBO=5V, IC=0.1A |
Comchip Technology |
1834 |
BC848BW-G |
Small Signal Transistor, VCBO=30V, VCEO=30V, VEBO=5V, IC=0.1A |
Comchip Technology |
1835 |
BC848C-G |
Small Signal Transistor, VCBO=30V, VCEO=30V, VEBO=6V, IC=0.1A |
Comchip Technology |
1836 |
BC848C-G |
Small Signal Transistor, VCBO=30V, VCEO=30V, VEBO=6V, IC=0.1A |
Comchip Technology |
1837 |
BC848CW-G |
Small Signal Transistor, VCBO=30V, VCEO=30V, VEBO=5V, IC=0.1A |
Comchip Technology |
1838 |
BC848CW-G |
Small Signal Transistor, VCBO=30V, VCEO=30V, VEBO=5V, IC=0.1A |
Comchip Technology |
1839 |
BC856AW-G |
Small Signal Transistor, VCBO=-80V, VCEO=-65V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1840 |
BC856BW-G |
Small Signal Transistor, VCBO=-80V, VCEO=-65V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1841 |
BC856CW-G |
Small Signal Transistor, VCBO=-80V, VCEO=-65V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1842 |
BC857AW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1843 |
BC857BW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1844 |
BC857CW-G |
Small Signal Transistor, VCBO=-50V, VCEO=-45V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1845 |
BC858AW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1846 |
BC858AW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1847 |
BC858BW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1848 |
BC858BW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1849 |
BC858CW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1850 |
BC858CW-G |
Small Signal Transistor, VCBO=-30V, VCEO=-30V, VEBO=-5V, IC=-0.1A |
Comchip Technology |
1851 |
BD142 |
Silicon N-P-N high power transistor. 50V, 117W. |
General Electric Solid State |
1852 |
BD182 |
Silicon N-P-N high power transistor. 70V, 117W. |
General Electric Solid State |
1853 |
BD201 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 60V, 60W. |
General Electric Solid State |
1854 |
BD202 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -60V, 60W. |
General Electric Solid State |
1855 |
BD203 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. 80V, 60W. |
General Electric Solid State |
1856 |
BD204 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. -80V, 60W. |
General Electric Solid State |
1857 |
BD240A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 30W. |
General Electric Solid State |
1858 |
BD240B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 30W. |
General Electric Solid State |
1859 |
BD241A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 40W. |
General Electric Solid State |
1860 |
BD241B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 40W. |
General Electric Solid State |
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