| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
NTE2931 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 1832 |
NTE2932 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 1833 |
NTE2933 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 1834 |
NTE2934 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 1835 |
NTE2935 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 1836 |
NTE2936 |
MOSFET N-Channel, Enhancement Mode High Speed Switch |
NTE Electronics |
| 1837 |
NTE5293A |
50 Watt Zener Diodes |
NTE Electronics |
| 1838 |
NTE5293AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 175.0V. Zener test current Izt = 70mA. |
NTE Electronics |
| 1839 |
OP293 |
Precision, Micropower Operational Amplifier |
Analog Devices |
| 1840 |
OP293 |
GaAs plastic infrared emitting diode |
Optek Technology |
| 1841 |
OP293A |
GaAs plastic infrared emitting diode |
Optek Technology |
| 1842 |
OP293B |
GaAs plastic infrared emitting diode |
Optek Technology |
| 1843 |
OP293C |
GaAs plastic infrared emitting diode |
Optek Technology |
| 1844 |
OP293EP |
Precision, Micropower Operational Amplifiers |
Analog Devices |
| 1845 |
OP293ES |
Precision, Micropower Operational Amplifiers |
Analog Devices |
| 1846 |
OP293ES-REEL |
Precision, Micropower Operational Amplifiers |
Analog Devices |
| 1847 |
OP293ES-REEL7 |
Precision, Micropower Operational Amplifiers |
Analog Devices |
| 1848 |
OP293FP |
Precision, Micropower Operational Amplifiers |
Analog Devices |
| 1849 |
OP293FS |
Precision, Micropower Operational Amplifiers |
Analog Devices |
| 1850 |
OP293FS-REEL |
Precision, Micropower Operational Amplifiers |
Analog Devices |
| 1851 |
OP293FS-REEL7 |
Precision, Micropower Operational Amplifiers |
Analog Devices |
| 1852 |
OP293GBC |
Precision, Micropower Operational Amplifiers |
Analog Devices |
| 1853 |
PE3293 |
1.8GHz/550MHz Dual Fractional-N Ultra-Low Spurious PLL for Frequency Synthesis |
etc |
| 1854 |
PE3293-00 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 1855 |
PE3293-04 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 1856 |
PE3293-11 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 1857 |
PE3293-12 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 1858 |
PE3293-14 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 1859 |
PE3293-15 |
1.8 GHz / 550 MHz dual fractional-N ultra-low spurious PLL for frequency synthesis |
Peregrine Semiconductor |
| 1860 |
PH2931-135S |
2900-3100 MHz, 135 W,20 ms, radar pulsed power transistor |
MA-Com |
| | | |
