| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
NTD5802N |
NTD5802N |
ON Semiconductor |
| 1832 |
NTD5803N |
NTD5803N |
ON Semiconductor |
| 1833 |
NTD5803N |
NTD5803N |
ON Semiconductor |
| 1834 |
NTD5804N |
40 V, 69 A, Single N−Channel, DPAK, 8.5 mÙ RDS(on) |
ON Semiconductor |
| 1835 |
NTD5805N |
Power MOSFET, 40 V, 51 A, Single N-Channel |
ON Semiconductor |
| 1836 |
NTD5806N |
Power MOSFET, 40 V, 33 A, Single N-Channel |
ON Semiconductor |
| 1837 |
NTD5807N |
Power MOSFET, 40 V, 23 A, Single N-Channel |
ON Semiconductor |
| 1838 |
NTE1580 |
Integrated Circuit IF Amp & Detector |
NTE Electronics |
| 1839 |
NTE2580 |
Silicon NPN Transistor High Voltage, High Current Switch |
NTE Electronics |
| 1840 |
NTE5175A |
Zener diode, 10 watt, +-5% tolerance. Nominal zener voltage Vz = 4.3V. Zener test current Izt = 580mA. |
NTE Electronics |
| 1841 |
NTE5580 |
Silicon Controlled Rectifier for Phase Control Applications |
NTE Electronics |
| 1842 |
NTE580 |
General Purpose Silicon Rectifier Fast Recovery |
NTE Electronics |
| 1843 |
NTE5800 |
Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp |
NTE Electronics |
| 1844 |
NTE5801 |
Axial lead standard recovery. Silicon rectifier, 3 amp. Peak repetitive reverse voltage, working peak reverse voltage, DS blocking voltage 100V. Non-repetitive peak reverse voltage 200V |
NTE Electronics |
| 1845 |
NTE5802 |
Axial lead standard recovery. Silicon rectifier, 3 amp. Peak repetitive reverse voltage, working peak reverse voltage, DS blocking voltage 200V. Non-repetitive peak reverse voltage 400V |
NTE Electronics |
| 1846 |
NTE5803 |
Axial lead standard recovery. Silicon rectifier, 3 amp. Peak repetitive reverse voltage, working peak reverse voltage, DS blocking voltage 300V. Non-repetitive peak reverse voltage 425V |
NTE Electronics |
| 1847 |
NTE5804 |
Axial lead standard recovery. Silicon rectifier, 3 amp. Peak repetitive reverse voltage, working peak reverse voltage, DS blocking voltage 400V. Non-repetitive peak reverse voltage 525V |
NTE Electronics |
| 1848 |
NTE5805 |
Axial lead standard recovery. Silicon rectifier, 3 amp. Peak repetitive reverse voltage, working peak reverse voltage, DS blocking voltage 500V. Non-repetitive peak reverse voltage 625V |
NTE Electronics |
| 1849 |
NTE5806 |
Axial lead standard recovery. Silicon rectifier, 3 amp. Peak repetitive reverse voltage, working peak reverse voltage, DS blocking voltage 600V. Non-repetitive peak reverse voltage 800V |
NTE Electronics |
| 1850 |
NTE5808 |
Axial lead standard recovery. Silicon rectifier, 3 amp. Peak repetitive reverse voltage, working peak reverse voltage, DS blocking voltage 800V. Non-repetitive peak reverse voltage 1000V |
NTE Electronics |
| 1851 |
NTE5809 |
Axial Lead Standard Recovery Silicon Rectifiers, 3 Amp |
NTE Electronics |
| 1852 |
NVD5803N |
Data Sheet |
ON Semiconductor |
| 1853 |
NX8562LB803-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1580.35 nm. Frequency 189.70 THz. Anode ground. FC-PC connector. |
NEC |
| 1854 |
NX8562LF803-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (20 mW min). ITU-T wavelength 1580.35 nm. Frequency 189.70 THz. Anode floating. FC-PC connector. |
NEC |
| 1855 |
NX8563LB803-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1580.35 nm. Frequency 189.70 THz. FC-PC connector. Anode ground. |
NEC |
| 1856 |
NX8563LF803-BA |
CW InGaAsP MQW DFB laser diode module for DWDM applications (10 mW min). ITU-T wavelength 1580.35 nm. Frequency 189.70 THz. FC-PC connector. Anode floating. |
NEC |
| 1857 |
OLH5800 |
Hermetic Opto-Isolated High-Speed Power MOSFET Drivers |
Skyworks Solutions |
| 1858 |
OLH5801 |
Hermetic Opto-Isolated High-Speed Power MOSFET Drivers |
Skyworks Solutions |
| 1859 |
OLI580 |
Opto-Isolated High-Speed Power MOSFET Driver for Hybrid Assembly |
Skyworks Solutions |
| 1860 |
OM7580SC |
Hi-Rel Adjustable 1.5V-5.5V 7.0A Linear Regulator in a MO-078AA Package |
International Rectifier |
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