| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
SMAJ130(C)A |
130V; 400mW surface mount transient voltage suppressor |
Diodes |
| 1832 |
SMAJ130A |
130 V, 1 mA, transient voltage suppressor |
Leshan Radio Company |
| 1833 |
SMAJ130A |
130.00V; 1mA ;400W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1834 |
SMAJ4743A |
Pd=1.0W, Vz=13V zener diode |
MCC |
| 1835 |
SMBJ130 |
130.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1836 |
SMBJ130(C)A |
130.0V; 600mW surface mount transient voltage suppressor |
Diodes |
| 1837 |
SMBJ130A |
130.00V; 1mA ;600W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1838 |
SMBJ5350B |
Pd=5.0W, Vz=13V zener diode |
MCC |
| 1839 |
SMBJ5381B |
Pd=5.0W, Vz=130V zener diode |
MCC |
| 1840 |
SMBJ5928 |
Pd=3.0W, Vz=13V zener diode |
MCC |
| 1841 |
SMBJ5952 |
Pd=3.0W, Vz=130V zener diode |
MCC |
| 1842 |
SMBZ-5243B |
13 V 500 mW, silicon planar zener diode |
Surge Components |
| 1843 |
SMCJ130 |
130.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1844 |
SMCJ130(C)A |
130V; 1500mW surface mount transient voltage suppressor |
Diodes |
| 1845 |
SMCJ130A |
130.00V; 1mA ;1500W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1846 |
SMCJ5350 |
Pd=5.0W, Vz=13V zener diode |
MCC |
| 1847 |
SMCJ5381 |
Pd=5.0W, Vz=130V zener diode |
MCC |
| 1848 |
SMDJ130 |
130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1849 |
SMDJ130A |
130.00V; 1mA ;3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1850 |
SMJ28F010B-12JDDM |
131072 by 8-bit flash memory |
Austin Semiconductor |
| 1851 |
SMJ28F010B-15JDDM |
131072 by 8-bit flash memory |
Austin Semiconductor |
| 1852 |
SMJ28F010B-20JDDM |
131072 by 8-bit flash memory |
Austin Semiconductor |
| 1853 |
SMLJ130 |
130.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1854 |
SMLJ130A |
130.00V; 1mA; 3000W peak pulse power; surface mount transient transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 1855 |
SN54ALS133 |
13-Input Positive-NAND Gates |
Texas Instruments |
| 1856 |
SN54ALS133FK |
13-INPUT POSITIVE-NAND GATES |
Texas Instruments |
| 1857 |
SN54ALS133J |
13-Input Positive-NAND Gates |
Texas Instruments |
| 1858 |
SN54LS133 |
13-INPUT NAND GATE |
Motorola |
| 1859 |
SN54LS133J |
13-INPUT NAND GATE |
Motorola |
| 1860 |
SN54S133 |
13-INPUT POSITIVE-NAND GATES |
Texas Instruments |
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