| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
JV1N7037CCU1 |
15A 100V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package DLA Number 1N7037CCU1 |
International Rectifier |
| 1832 |
JV1N7039CCT1 |
35A 150V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package DLA Number 1N7039CCT1 |
International Rectifier |
| 1833 |
JV1N7039CCU1 |
35A 150V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package DLA Number 1N7039CCU1 |
International Rectifier |
| 1834 |
JV1N7041CCU1 |
20A 45V Hi-Rel Schottky Common Cathode Diode in a SMD-1 package DLA Number 1N7041CCU1 |
International Rectifier |
| 1835 |
JV1N7043CCT1 |
35A 100V Hi-Rel Schottky Common Cathode Diode in a TO-254AA package DLA Number 1N7043CCT1 |
International Rectifier |
| 1836 |
JV1N7047CCT3 |
16A 150V Hi-Rel Schottky Common Cathode Diode in a TO-257AA package DLA Number 1N7047CCT3 |
International Rectifier |
| 1837 |
JV1N7058CCU3 |
30A 150V Hi-Rel Schottky Common Cathode Diode in a SMD-0.5 package DLA Number 1N7058CCU3 |
International Rectifier |
| 1838 |
K4F16(7)0811(2)D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1839 |
K4F660411D, K4F640411D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1840 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1841 |
K4F660412D, K4F640412D |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1842 |
K4F660412E, K4F640412E |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1843 |
K4F660412E, K4F640412E |
16M x 4bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1844 |
K4F660811D, K4F640811D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1845 |
K4F660812D, K4F640812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1846 |
K4F660812D, K4F640812D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1847 |
K4F660812E, K4F640812E |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1848 |
K4F660812E, K4F640812E |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1849 |
K4F661611D, K4F641611D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1850 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1851 |
K4F661612D, K4F641612D |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1852 |
K4F661612E, K4F641612E |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1853 |
K4F661612E, K4F641612E |
4M x 16bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
| 1854 |
L292 |
SWITCH-MODE DRIVER FOR DC MOTORS |
SGS Thomson Microelectronics |
| 1855 |
L292 |
SWITCH-MODE DRIVER FOR DC MOTORS |
ST Microelectronics |
| 1856 |
L292H |
SWITCH-MODE DRIVER FOR DC MOTORS |
ST Microelectronics |
| 1857 |
L6370 |
2.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH |
SGS Thomson Microelectronics |
| 1858 |
L6370 |
2.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH |
ST Microelectronics |
| 1859 |
L6370D |
2.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH |
SGS Thomson Microelectronics |
| 1860 |
L6370D013TR |
2.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH |
ST Microelectronics |
| | | |
