No. |
Part Name |
Description |
Manufacturer |
1831 |
3560-16PR |
Long-Life I/O Connectors |
Hirose Electric |
1832 |
3560-16S |
Long-Life I/O Connectors |
Hirose Electric |
1833 |
3560-16SR |
Long-Life I/O Connectors |
Hirose Electric |
1834 |
3560A-16P |
Long-Life I/O Connectors |
Hirose Electric |
1835 |
3560A-16PR |
Long-Life I/O Connectors |
Hirose Electric |
1836 |
3560A-16S |
Long-Life I/O Connectors |
Hirose Electric |
1837 |
3560A-16SR |
Long-Life I/O Connectors |
Hirose Electric |
1838 |
3802 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
1839 |
3820 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
1840 |
3850 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
1841 |
3886GROUP |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
1842 |
38C1 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER |
Mitsubishi Electric Corporation |
1843 |
38C2 |
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER������ |
Mitsubishi Electric Corporation |
1844 |
3C-2000M-1 |
2 GHz Band Power Dividers/Combiners |
Hirose Electric |
1845 |
3CV-CJ |
RFCO-AXIAL CONNECTORS |
Hirose Electric |
1846 |
3CV-CP |
RFCO-AXIAL CONNECTORS |
Hirose Electric |
1847 |
3N128 |
Silicon MOS Transistor |
General Electric Solid State |
1848 |
3N142 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
1849 |
3N143 |
Silicon MOS Transistor |
General Electric Solid State |
1850 |
3N152 |
Silicon MOS transistor. |
General Electric Solid State |
1851 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
1852 |
3N154 |
SILICON MOS TRANSISTOR |
General Electric Solid State |
1853 |
3N187 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
1854 |
3N200 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
1855 |
3N204 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
1856 |
3N205 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
1857 |
3N206 |
Silicon dual insulated-gate field-effect transistor. |
General Electric Solid State |
1858 |
3R3TI30E-080 |
DIODE and TYRISTOR MODULE |
Fuji Electric |
1859 |
3R3TI60E-080 |
DIODE and TYRISTOR MODULE |
Fuji Electric |
1860 |
3RTI20E-080 |
DIODE and TYRISTOR MODULE |
Fuji Electric |
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