No. |
Part Name |
Description |
Manufacturer |
1831 |
2SD968 |
Silicon PNP epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
1832 |
2SD968 |
Silicon NPN epitaxial planer type(For low-frequency driver amplification) |
Panasonic |
1833 |
2SD968A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1834 |
2SD973 |
Silicon NPN epitaxial planer type(For low-frequency power amplification) |
Panasonic |
1835 |
2SD973A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
1836 |
2SJ106 |
Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications |
TOSHIBA |
1837 |
2SJ115 |
Silicon P-Channel MOS audio frequency power transistor |
TOSHIBA |
1838 |
2SJ144 |
Field Effect Transistor Silicon P Channel Junction Type Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications |
TOSHIBA |
1839 |
2SJ145 |
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE |
Isahaya Electronics Corporation |
1840 |
2SJ313 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
1841 |
2SJ338 |
Field Effect Transistor Silicon P Channel MOS Type Audio Frequency Power Amplifier Application |
TOSHIBA |
1842 |
2SJ440 |
FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE - AUDIO FREQUENCY POWER AMPLIFIER APPLICATION |
TOSHIBA |
1843 |
2SJ440-Y |
P CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION) |
TOSHIBA |
1844 |
2SJ48 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1845 |
2SJ49 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1846 |
2SJ50 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1847 |
2SJ55 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK175 |
Hitachi Semiconductor |
1848 |
2SJ56 |
Silicon P-Channel MOS FET, for low frequency power amplifier, complementary pair with 2SK176 |
Hitachi Semiconductor |
1849 |
2SK1065 |
High-Frequency General-Purpose Amp Applications |
SANYO |
1850 |
2SK1066 |
High-Frequency General-Purpose Amp Applications |
SANYO |
1851 |
2SK1069 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
1852 |
2SK133 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1853 |
2SK1332 |
N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications |
SANYO |
1854 |
2SK134 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1855 |
2SK135 |
LOW FREQUENCY POWER AMPLIFIER |
Hitachi Semiconductor |
1856 |
2SK1611 |
V(dss): 800V; silicon N-channel powe F-MOS FET. For high-speed switching, for high frequency power amplification |
Panasonic |
1857 |
2SK1740 |
HF amplifiers low frequency amplifiers analog switches |
SANYO |
1858 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
1859 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
1860 |
2SK1875 |
Field Effect Transistor Silicon N Channel Junction Type High Frequency Amplifier Applications AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications |
TOSHIBA |
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