| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
HER804S |
HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes) |
Rectron Semiconductor |
| 1832 |
HER805 |
8.0 AMP HIGH EFFICIENCY RECTIFIERS |
Bytes |
| 1833 |
HER805 |
TECHNICAL SPECIFICATIONS OF HIGH EFFICIENCY RECTIFIER |
DC Components |
| 1834 |
HER805 |
8.0 AMP HIGH EFFICIENCY RECTIFIERS |
Formosa MS |
| 1835 |
HER805 |
HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes) |
Rectron Semiconductor |
| 1836 |
HER805P |
HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes) |
Rectron Semiconductor |
| 1837 |
HER805PS |
HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes) |
Rectron Semiconductor |
| 1838 |
HER805R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 400 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 1839 |
HER805S |
HIGH EFFICIENCY RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 8.0 Amperes) |
Rectron Semiconductor |
| 1840 |
HER806 |
8.0 AMP HIGH EFFICIENCY RECTIFIERS |
Bytes |
| 1841 |
HER806 |
8.0 AMP HIGH EFFICIENCY RECTIFIERS |
Formosa MS |
| 1842 |
HER806R |
High efficiency rectifier. Case negative. Maximum recurrent peak reverse voltage 600 V. Maximum average forward rectified current 8.0 A. |
Bytes |
| 1843 |
HERA805G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1844 |
HERAF1001G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1845 |
HERAF1002G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1846 |
HERAF1003G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1847 |
HERAF1004G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1848 |
HERAF1005G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1849 |
HERAF1006G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1850 |
HERAF1007G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1851 |
HERAF1008G |
Discrete Devices -Diode-High Efficienct Recovery |
Taiwan Semiconductor |
| 1852 |
HFM101 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 1853 |
HFM102 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 1854 |
HFM103 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 1855 |
HFM104 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 1856 |
HFM105 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 1857 |
HFM106 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 1858 |
HFM107 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 1859 |
HFM108 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere) |
Rectron Semiconductor |
| 1860 |
HFM201 |
SURFACE MOUNT GLASS PASSIVATED HIGH EFFICIENCY SILICON RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 2.0 Amperes) |
Rectron Semiconductor |
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