| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 1832 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 1833 |
BAT18 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 1834 |
BAT18 |
-Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 1835 |
BAT18-04 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 1836 |
BAT18-05 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 1837 |
BAT18-06 |
Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
Siemens |
| 1838 |
BAW24 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 1839 |
BAW25 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 1840 |
BAW26 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 1841 |
BAW27 |
Silicon epitaxial planar diode for use as high speed switch and core driver |
AEG-TELEFUNKEN |
| 1842 |
BB125 |
Variable Capacitance Diode with a large capacitance ratio |
IPRS Baneasa |
| 1843 |
BB126 |
Variable Capacitance Diode with a large capacitance ratio |
IPRS Baneasa |
| 1844 |
BB139 |
Variable Capacitance Diode with a large capacitance ratio, intended for electronictuning in VHF tuners |
IPRS Baneasa |
| 1845 |
BCW60A |
Silicon NPN Epitaxial Planar AF Transistor, Marked with AA |
AEG-TELEFUNKEN |
| 1846 |
BCW60B |
Silicon NPN Epitaxial Planar AF Transistor, Marked with AB |
AEG-TELEFUNKEN |
| 1847 |
BCW60C |
Silicon NPN Epitaxial Planar AF Transistor, Marked with AC |
AEG-TELEFUNKEN |
| 1848 |
BCW60D |
Silicon NPN Epitaxial Planar AF Transistor, Marked with AD |
AEG-TELEFUNKEN |
| 1849 |
BCX70G |
Silicon NPN Epitaxial Planar AF Transistor, Marked with AG |
AEG-TELEFUNKEN |
| 1850 |
BCX70H |
Silicon NPN Epitaxial Planar AF Transistor, Marked with AH |
AEG-TELEFUNKEN |
| 1851 |
BCX70J |
Silicon NPN Epitaxial Planar AF Transistor, Marked with AJ |
AEG-TELEFUNKEN |
| 1852 |
BCX70K |
Silicon NPN Epitaxial Planar AF Transistor, Marked with AK |
AEG-TELEFUNKEN |
| 1853 |
BCX78 |
PNP transistor for NF pre- and driver stages as well as switch applications |
Siemens |
| 1854 |
BCX78IX |
PNP transistor for NF pre- and driver stages as well as switch applications |
Siemens |
| 1855 |
BCX78VII |
PNP transistor for NF pre- and driver stages as well as switch applications |
Siemens |
| 1856 |
BCX78VIII |
PNP transistor for NF pre- and driver stages as well as switch applications |
Siemens |
| 1857 |
BCX78X |
PNP transistor for NF pre- and driver stages as well as switch applications |
Siemens |
| 1858 |
BCX79 |
PNP transistor for NF pre- and driver stages as well as switch applications |
Siemens |
| 1859 |
BCX79IX |
PNP transistor for NF pre- and driver stages as well as switch applications |
Siemens |
| 1860 |
BCX79VII |
PNP transistor for NF pre- and driver stages as well as switch applications |
Siemens |
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