| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
CSD794Y |
10.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB744Y |
Continental Device India Limited |
| 1832 |
CSD880 |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 300 hFE. Complementary CSB834 |
Continental Device India Limited |
| 1833 |
CSD880GR |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 150 - 300 hFE. Complementary CSB834GR |
Continental Device India Limited |
| 1834 |
CSD880O |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB834O |
Continental Device India Limited |
| 1835 |
CSD880Y |
30.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB834Y |
Continental Device India Limited |
| 1836 |
CSD882 |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 400 hFE. Complementary CSB772 |
Continental Device India Limited |
| 1837 |
CSD882E |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 200 - 400 hFE. Complementary CSB772E |
Continental Device India Limited |
| 1838 |
CSD882P |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 160 - 320 hFE. Complementary CSB772P |
Continental Device India Limited |
| 1839 |
CSD882Q |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 100 - 200 hFE. Complementary CSB772Q |
Continental Device India Limited |
| 1840 |
CSD882R |
10.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 3.000A Ic, 60 - 120 hFE. Complementary CSB772R |
Continental Device India Limited |
| 1841 |
CURRENT |
Photocoupler - Supplementary Information |
TOSHIBA |
| 1842 |
CXA1352AS |
2-channel 5 Elements Graphic Equalizer IC |
SONY |
| 1843 |
CXA1391Q |
Processing IC for Complementary Color Mosaic CCD Camera |
SONY |
| 1844 |
CXA1391Q/R |
Processing IC for Complementary Color Mosaic CCD |
SONY |
| 1845 |
CXA1391R |
Processing IC for Complementary Color Mosaic CCD Camera |
SONY |
| 1846 |
CXA1792 |
2-CHANNEL/ 5-ELEMENT GRAPHIC EQUALIZER IC |
SONY |
| 1847 |
CXA1792S |
2-Channel,5-Element Graphic Equalizer IC |
SONY |
| 1848 |
CXT3904NPN |
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 1849 |
CXT3906PNP |
SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 1850 |
CXY11 |
Gallium arsenide, Gunn effect, element for the X-Band |
VALVO |
| 1851 |
CXY13 |
Gallium arsenide, Gunn effect, element for the X-Band |
VALVO |
| 1852 |
CXY14 |
Gallium arsenide, Gunn effect, element for the J-Band (Ku-Band) |
VALVO |
| 1853 |
CZT305 |
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR |
Central Semiconductor |
| 1854 |
CZT3055NPN |
2.0W SURFACE MOUNT COMPLEMENTARY SILICON POWER TRANSISTOR |
Central Semiconductor |
| 1855 |
CZT31C |
2.0W COMPLEMENTARY SILICON POWER TRANSISTOR |
Central Semiconductor |
| 1856 |
CZT32C |
2.0W COMPLEMENTARY SILICON POWER TRANSISTOR |
Central Semiconductor |
| 1857 |
CZT3904 |
COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 1858 |
CZT3904NPN |
COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 1859 |
CZT3906 |
COMPLEMENTARY SILICON TRANSISTORS |
Central Semiconductor |
| 1860 |
D44C |
COMPLEMENTARY SILICON POWER TRANSISTORS |
Boca Semiconductor Corporation |
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