| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
1N4929 |
Low noise, temperature-compensated zener reference diode 19.2V |
Motorola |
| 1832 |
1N4929A |
Low noise, temperature-compensated zener reference diode 19.2V |
Motorola |
| 1833 |
1N4930 |
Low noise, temperature-compensated zener reference diode 19.2V |
Motorola |
| 1834 |
1N4930A |
Low noise, temperature-compensated zener reference diode 19.2V |
Motorola |
| 1835 |
1N4931 |
Low noise, temperature-compensated zener reference diode 19.2V |
Motorola |
| 1836 |
1N4931A |
Low noise, temperature-compensated zener reference diode 19.2V |
Motorola |
| 1837 |
1N4932 |
Low noise, temperature-compensated zener reference diode 19.2V |
Motorola |
| 1838 |
1N4932A |
Low noise, temperature-compensated zener reference diode 19.2V |
Motorola |
| 1839 |
1N5518 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1840 |
1N5518 |
0.4W LOW VOLTAGE AVALANCHE DIODES |
Jinan Gude Electronic Device |
| 1841 |
1N5518 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1842 |
1N5518 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1843 |
1N5518 |
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE |
Knox Semiconductor Inc |
| 1844 |
1N5518 |
Low Voltage Avalanche Zener |
Microsemi |
| 1845 |
1N5518-1 |
LOW VOLTAGE AVALANCHE DIODES DO-35 |
Microsemi |
| 1846 |
1N5518A |
0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 1847 |
1N5518A |
Low Voltage Avalanche Zener |
Microsemi |
| 1848 |
1N5518A-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1849 |
1N5518A-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1850 |
1N5518AUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1851 |
1N5518AUR-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1852 |
1N5518B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1853 |
1N5518B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 1854 |
1N5518B |
Low Voltage Avalanche Zener |
Microsemi |
| 1855 |
1N5518B |
Low Voltage Avalanche Zener |
Microsemi |
| 1856 |
1N5518B (DO35) |
Low Voltage Avalanche Zener |
Microsemi |
| 1857 |
1N5518B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 1858 |
1N5518B-1 |
Low Voltage Avalanche Zener |
Microsemi |
| 1859 |
1N5518B-1E3 |
Low Voltage Avalanche Zener |
Microsemi |
| 1860 |
1N5518BUR-1 |
Low Voltage Avalanche Zener |
Microsemi |
| | | |
