No. |
Part Name |
Description |
Manufacturer |
1831 |
NJM2073S |
DUAL LOW VOLTAGE POWER AMPLIFIER |
New Japan Radio |
1832 |
NJM2076 |
Dual Low Voltage Power Amplifier |
New Japan Radio |
1833 |
NJM2076D |
DUAL LOW VOLTAGE POWER AMPLIFIER�� |
New Japan Radio |
1834 |
NJM2076M |
DUAL LOW VOLTAGE POWER AMPLIFIER�� |
New Japan Radio |
1835 |
NJM2076S |
DUAL LOW VOLTAGE POWER AMPLIFIER�� |
New Japan Radio |
1836 |
NJM2078 |
Voltage Detector |
New Japan Radio |
1837 |
NJM2078D |
VOLTAGE DETECTOR |
New Japan Radio |
1838 |
NJM2078M |
VOLTAGE DETECTOR |
New Japan Radio |
1839 |
NJM2082 |
Dual J-FET Input Operational Amplifier |
New Japan Radio |
1840 |
NJM2082D |
DUAL J-FET INPUT OPERATIONAL AMPLIFIER������ |
New Japan Radio |
1841 |
NJM2082L |
DUAL J-FET INPUT OPERATIONAL AMPLIFIER������ |
New Japan Radio |
1842 |
NJM2082M |
DUAL J-FET INPUT OPERATIONAL AMPLIFIER������ |
New Japan Radio |
1843 |
NJM2082V |
DUAL J-FET INPUT OPERATIONAL AMPLIFIER������ |
New Japan Radio |
1844 |
NJM2085 |
Pre Amplifier and Dolby B Type Noise Reduction System |
New Japan Radio |
1845 |
NJM2085M |
PREAMPLIFIER AND DOLBY B TYPE NOISE REDUCTION SYSTEM |
New Japan Radio |
1846 |
NJM2096 |
Low Voltage Dual Power Amplifier |
New Japan Radio |
1847 |
NJM2096D |
LOW VOLTAGE DUAL POWER AMPLIFIER�� |
New Japan Radio |
1848 |
NJM2096M |
LOW VOLTAGE DUAL POWER AMPLIFIER�� |
New Japan Radio |
1849 |
NJM2096S |
LOW VOLTAGE DUAL POWER AMPLIFIER�� |
New Japan Radio |
1850 |
NJM2097 |
HEX OPERATIONAL AMPLIFIER |
New Japan Radio |
1851 |
NJM2097M |
HEX OPERATIONAL AMPLIFIER |
New Japan Radio |
1852 |
NJU6358M20 |
SERIAL I/O REAL TIME CLOCK WITH WAKE UP OUTPUT |
New Japan Radio |
1853 |
NM27C512QM200 |
524,288-bit (64K x 8) high performance CMOS EPROM, 200ns |
National Semiconductor |
1854 |
NM27P040QM200 |
4,194,304-Bit (512K x 8) Processor Oriented CMOS EPROM |
National Semiconductor |
1855 |
NMC27C010QM200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (128k x 8) UV erasable CMOS PROM |
National Semiconductor |
1856 |
NMC27C1024QM200 |
200 ns, Vcc=5V+/-10%, 1,048,576-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
1857 |
NMC27C128BQM200 |
200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
1858 |
NMC27C256BQM200 |
200 ns, Vcc=5V+/-10%, 262,144-bit (32k x 8) high speed version UV erasable CMOS PROM |
National Semiconductor |
1859 |
NMC27C512AQM200 |
200 ns, Vcc=5V+/-10%, 524,288-bit (64k x 8) UV erasable CMOS PROM |
National Semiconductor |
1860 |
NMC27C64QM200 |
200 ns, Vcc=5V+/-10%, 65,536-bit (8k x 8) UV erasable CMOS PROM |
National Semiconductor |
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