| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
2SA673B |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 1832 |
2SA673C |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 1833 |
2SA673D |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 1834 |
2SA683 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1835 |
2SA684 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1836 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 1837 |
2SA708 |
LOW FREQUENCY AMPLIFIER MEDIUM SPEED SWITCHING |
USHA India LTD |
| 1838 |
2SA709 |
HIGH VOLTAGE AMPLIFIER |
USHA India LTD |
| 1839 |
2SA719 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1840 |
2SA720 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1841 |
2SA720A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1842 |
2SA733 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 1843 |
2SA733 |
LOW FREQUENCY AMPLIFIER PNP EPITAXIAL SILICON TRANSISTOR |
Unisonic Technologies |
| 1844 |
2SA733 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 1845 |
2SA733P |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 1846 |
2SA733Q |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 1847 |
2SA733R |
PNP transistor for use in driver of AF amplifier, 60V, 0.1A |
NEC |
| 1848 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
| 1849 |
2SA763 |
PNP silicon transistor for low noise audio amplifier applications |
TOSHIBA |
| 1850 |
2SA769 |
PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER) |
Wing Shing Computer Components |
| 1851 |
2SA777 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
| 1852 |
2SA781 |
SILICON PNP EPITAXIAL HIGH FREQUNCY AMPLIFIER |
Hitachi Semiconductor |
| 1853 |
2SA781K |
SILICON PNP EPITAXIAL HIGH FREQUNCY AMPLIFIER |
Hitachi Semiconductor |
| 1854 |
2SA811 |
Audio frequency high gain amplifier PNP silicon epitaxial transistor |
NEC |
| 1855 |
2SA811A |
AUDIO FREQUENCY HIGH GAIN AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1856 |
2SA812 |
AUDIO FREQUENCY,GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 1857 |
2SA817 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 1858 |
2SA817A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1859 |
2SA817A |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) DRIVER STAGE AMPLIFIER APPLICATIONS VOLTAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1860 |
2SA836 |
Transistors>Amplifiers/Bipolar |
Renesas |
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