No. |
Part Name |
Description |
Manufacturer |
1831 |
F407 |
Silicon diode - standard rectifier |
IPRS Baneasa |
1832 |
F4AC |
Silicon Diode - Controlled Avalanche Rectifier |
IPRS Baneasa |
1833 |
F602 |
Silicon diode - standard rectifier |
IPRS Baneasa |
1834 |
F6AC |
Silicon Diode - Controlled Avalanche Rectifier |
IPRS Baneasa |
1835 |
F802 |
Silicon diode - standard rectifier |
IPRS Baneasa |
1836 |
F8AC |
Silicon Diode - Controlled Avalanche Rectifier |
IPRS Baneasa |
1837 |
FFAF60A150DSTU |
6A/1500V Damper and 20A/600V Modulation Diode |
Fairchild Semiconductor |
1838 |
FFPF60B150DS |
DAMPER + MODULATION DIODE |
Fairchild Semiconductor |
1839 |
FFPF60B150DSTU |
6A/1500V Damper and 20A/600V Modulation Diode |
Fairchild Semiconductor |
1840 |
FH1100 |
SILICON DIODE |
Advanced Semiconductor |
1841 |
FIC03272 |
Microprocessor for handling signals from the TGS4161 carbon dioxide sensor |
etc |
1842 |
FQD20N06LETM |
60V N-Channel Logic level QFET (Built in ESD Protection Diode) |
Fairchild Semiconductor |
1843 |
FRA254GP |
25.0 Amp GLASS PASSIVATED BUTTON DIODE 400 Volts |
MCC |
1844 |
FRA254GP |
25.0 Amp GLASS PASSIVATED BUTTON DIODE 400 Volts |
Micro Commercial Components |
1845 |
GA301 |
HF detection diode |
Tesla Elektronicke |
1846 |
GAO10 |
Gunn diode for the frequency range 8 to 14 GHz, datasheet in german language |
Siemens |
1847 |
GAO20 |
Gunn diode for the frequency range 8 to 14 GHz, datasheet in german language |
Siemens |
1848 |
GAO50 |
Gunn diode for the frequency range 8 to 14 GHz, datasheet in german language |
Siemens |
1849 |
GC4210 |
PIN Diode |
Microsemi |
1850 |
GC4211 |
PIN Diode |
Microsemi |
1851 |
GC4212 |
PIN Diode |
Microsemi |
1852 |
GC4213 |
PIN Diode |
Microsemi |
1853 |
GC4214 |
PIN Diode |
Microsemi |
1854 |
GC4215 |
PIN Diode |
Microsemi |
1855 |
GC4220 |
PIN Diode |
Microsemi |
1856 |
GC4221 |
PIN Diode |
Microsemi |
1857 |
GC4222 |
PIN Diode |
Microsemi |
1858 |
GC4223 |
PIN Diode |
Microsemi |
1859 |
GC4224 |
PIN Diode |
Microsemi |
1860 |
GC4225 |
PIN Diode |
Microsemi |
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