| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
2SC5093 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1832 |
2SC5095 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1833 |
2SC5096 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1834 |
2SC5096FT |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1835 |
2SC5097 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1836 |
2SC5098 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 1837 |
2SC509G |
Silicon NPN epitaxial planar medium power transistor |
TOSHIBA |
| 1838 |
2SC5106 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
| 1839 |
2SC5107 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
| 1840 |
2SC5108 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
| 1841 |
2SC5108FT |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
| 1842 |
2SC5109 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
| 1843 |
2SC5110 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
| 1844 |
2SC5111 |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
| 1845 |
2SC5111FT |
Transistor Silicon NPN Epitaxial Planar Type For VCO Application |
TOSHIBA |
| 1846 |
2SC5136 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1847 |
2SC5137 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1848 |
2SC5139 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 1849 |
2SC5154 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATION DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1850 |
2SC5155 |
NPN Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amplifier, Applications |
SANYO |
| 1851 |
2SC5171 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1852 |
2SC5174 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS |
TOSHIBA |
| 1853 |
2SC5175 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE. HIGH CURRENT SWITCHING APPLICATIONS. |
TOSHIBA |
| 1854 |
2SC5176 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. |
TOSHIBA |
| 1855 |
2SC5177 |
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1856 |
2SC5178 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1857 |
2SC5178-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1858 |
2SC5178-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1859 |
2SC5179 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
| 1860 |
2SC5179-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION |
NEC |
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