No. |
Part Name |
Description |
Manufacturer |
1831 |
2N7227U |
N-Channel |
Microsemi |
1832 |
2N7228 |
POWER MOS IV JEDEC REGISTERED N - CHANNEL HIGH VOLTAGE POWER MOSFETS 500 Volt 0.415 Ohm |
Advanced Power Technology |
1833 |
2N7228 |
N-Channel |
Microsemi |
1834 |
2N7228 |
12A N-channel enhancement mode MOSFET power transistor |
Omnirel |
1835 |
2N7228U |
N-Channel |
Microsemi |
1836 |
2N7236 |
P-Channel |
Microsemi |
1837 |
2N7236U |
P-Channel |
Microsemi |
1838 |
2N7261 |
N-Channel |
Microsemi |
1839 |
2N7262 |
N-Channel |
Microsemi |
1840 |
2N7268 |
N-Channel |
Microsemi |
1841 |
2N7269 |
N-Channel |
Microsemi |
1842 |
2N7288D |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
1843 |
2N7288H |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
1844 |
2N7288R |
Radiation Hardened N-Channel Power MOSFETs |
Intersil |
1845 |
2N7335 |
P-Channel |
Microsemi |
1846 |
2N7335E3 |
P-Channel |
Microsemi |
1847 |
2N7380 |
N-Channel |
Microsemi |
1848 |
2N7381 |
N-Channel |
Microsemi |
1849 |
2N7389 |
P-Channel |
Microsemi |
1850 |
2N7593U3 |
250V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-0.5 package. Also available with Total Dose Rating of 300kRads. |
International Rectifier |
1851 |
2PG001 |
N-channel enhancement mode IGBT |
Panasonic |
1852 |
2PG002 |
N-channel enhancement mode IGBT |
Panasonic |
1853 |
2PG003 |
N-channel enhancement mode IGBT |
Panasonic |
1854 |
2PG006 |
Silicon N-channel enhancement IGBT |
Panasonic |
1855 |
2PG009 |
Silicon N-channel enhancement IGBT |
Panasonic |
1856 |
2PG011 |
Silicon N-channel enhancement IGBT |
Panasonic |
1857 |
2SD3067 |
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHIGN/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
TOSHIBA |
1858 |
2SD620 |
Silicon N-Channel MOS FET |
Panasonic |
1859 |
2SJ0146 |
Silicon P-Channel MOS FET |
Panasonic |
1860 |
2SJ0364G |
Silicon P-channel junction FET |
Panasonic |
| | | |