| No. |
Part Name |
Description |
Manufacturer |
| 1831 |
BC559 |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 1832 |
BC559A |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 1833 |
BC559B |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 1834 |
BC559C |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 1835 |
BC560 |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 1836 |
BC560A |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 1837 |
BC560B |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 1838 |
BC560C |
Low-power general purpose PNP transistor - plastic case |
IPRS Baneasa |
| 1839 |
BELASIGNA250 |
Programmable Audio Processing System for Ultra-Low-Power Embedded and Portable Digital Audio |
ON Semiconductor |
| 1840 |
BFP180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1841 |
BFP180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA) |
Siemens |
| 1842 |
BFP280 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1843 |
BFP280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1844 |
BFR180 |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1845 |
BFR180W |
NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA) |
Siemens |
| 1846 |
BFR280 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1847 |
BFR280W |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems |
Siemens |
| 1848 |
BFR84 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 1849 |
BFS28 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 1850 |
BFS480 |
NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems) |
Siemens |
| 1851 |
BSV81 |
Low-Power N-Channel Field-Effect MOS Transistor |
CCSIT-CE |
| 1852 |
CA3021 |
Low-Power Video and Wideband Amplifier |
RCA Solid State |
| 1853 |
CA3022 |
Low-Power Video and Wideband Amplifier |
RCA Solid State |
| 1854 |
CA3023 |
Low-Power Video and Wideband Amplifier |
RCA Solid State |
| 1855 |
CA3127E |
High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. |
General Electric Solid State |
| 1856 |
CA3127F |
High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. |
General Electric Solid State |
| 1857 |
CA3127H |
High-freguency N-P-N transistor array. For low-power applications at frequencies up to 500 MHz. |
General Electric Solid State |
| 1858 |
CA3227 |
High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz |
Intersil |
| 1859 |
CA3227E |
High-frequency N-P-N transistor array. For low-power applications at frequencies up to 1.5 GHz. |
General Electric Solid State |
| 1860 |
CA3227E |
High-Frequency NPN Transistor Array For Low-Power Applications at Frequencies Up to 1.5GHz |
Intersil |
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