No. |
Part Name |
Description |
Manufacturer |
1831 |
BF256 |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
1832 |
BF256A |
N-Channel Field-Effect Transistor |
IPRS Baneasa |
1833 |
BF256A |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
1834 |
BF256A |
Field effect transistor N-channel |
mble |
1835 |
BF256A |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
1836 |
BF256B |
N-Channel Field-Effect Transistor |
IPRS Baneasa |
1837 |
BF256B |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
1838 |
BF256B |
Field effect transistor N-channel |
mble |
1839 |
BF256B |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
1840 |
BF256C |
N-Channel Field-Effect Transistor |
IPRS Baneasa |
1841 |
BF256C |
Silicon N Channel Field-Effect Transistor |
IPRS Baneasa |
1842 |
BF256C |
Field effect transistor N-channel |
mble |
1843 |
BF256C |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
1844 |
BF256L |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
1845 |
BF256LA |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
1846 |
BF256LB |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
1847 |
BF256LC |
N-Channel Epitaxial Planar Silicon Field Effect Transistor |
Texas Instruments |
1848 |
BF259 |
NPN High Voltage Video Output Transistor |
National Semiconductor |
1849 |
BF350 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
1850 |
BF351 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
1851 |
BF352 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
1852 |
BF353 |
N-Channel Silicon Dualgate MOS planar Field Effect Transistor |
Texas Instruments |
1853 |
BF410 |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
1854 |
BF410A |
N-channel silicon field-effect transistors |
Philips |
1855 |
BF410A |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
1856 |
BF410B |
N-channel silicon field-effect transistors |
Philips |
1857 |
BF410B |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
1858 |
BF410C |
N-channel silicon field-effect transistors |
Philips |
1859 |
BF410C |
LOW-NOISE N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR FOR RF APPLICATIONS |
Siemens |
1860 |
BF410D |
N-channel silicon field-effect transistors |
Philips |
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